| PART |
Description |
Maker |
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| MSM51V16405D MSM51V16405D-50SJ MSM51V16405D-50TS-K |
4,194,304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字4位动态随机存储器：快速页面模式型与江
TVS 400W 40V UNIDIRECT SMA 4194304字4位动态随机存储器：快速页面模式型与江
4194304-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| HYB5117805BSJ-70 HYB5117805BSJ-60 HYB5117805BSJ-50 |
From old datasheet system
2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式（4194304 - Word6位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| MH4V724AWXJ-6 MH4V724AWXJ-5 MH4V724AWXJ |
FAST PAGE MODE 301989888 - BIT ( 4194304 - WORD BY 72 - BIT ) DYNAMIC RAM 快速页面模01989888 -位（4194304 - Word2 -位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式（3.3伏，4米4带扩展数据输出页模式动态随机存储器（刷k）的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IBM11N32645BB-60W IBM11N32735BB-60W IBM11N32645CB- |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| M5M44400BJ M5M44400BL M5M44400BRT-5 M5M44400BRT-5S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM
(BJ/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric Semiconductor
|
| IS41LV16100-50T IS41LV16100-50KI IS41LV16100-50TL |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| MB8116165B-50 MB8116165B-60 |
1 M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1 M ×16位超级页面存取模式动态RAM)
1 M ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 1 M ?16浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
