| PART |
Description |
Maker |
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 4900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX PLC
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| AO6602 |
30V Complementary MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| NTGD4167C |
Complementary, 30V, 2.9/-2.2 A, TSOP-6 Dual
|
ON Semiconductor
|
| SI4542DY SI4542D SI4542 |
30V Complementary PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| KI4542DY |
30V Complementary PowerTrench MOSFET
|
Guangdong Kexin Industrial Co.,Ltd
|
| WFS5HB03N8 |
30V SO8 Complementary enhancementmode MOSFET H-Bridge
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| AO4612 |
60V Complementary Enhancement 60V Complementary Enhancement
|
ShenZhen FreesCale Electronics. Co., Ltd
|
