| PART |
Description |
Maker |
| IRF7503 IRF7503TR |
Generation V Technology
Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
|
International Rectifier
|
| IRF7506PBF IRF7506 IRF7506TRPBF IRF7406PBF IRF7506 |
Generation V Technology
HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)
ULTRA LOW ON RESISTANCE
|
IRF[International Rectifier]
|
| IRF7306PBF |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IDT8T49N008I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| 8T49N028 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRLML6302PBF |
Generation V Technology Ultra Low On-Resustance P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
