| PART |
Description |
Maker |
| BAS70LT1 ON0123 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
From old datasheet system
70VOLTS SCHOTTKY BARRIER DIODES
CASE 318 08 STYLE 8 SOT 23 (TO 236AB)
|
Motorola, Inc
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| 2SA1806 2SA1806R |
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | SOT-416 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 50mA的一（c）|SOT - 416
|
Jiangsu Changjiang Electronics Technology Co., Ltd.
Matsshita / Panasonic
|
| BAV70LT1 |
CASE 318-08/ STYLE 9 SOT-23 (TO-236AB)
|
Motorola Inc
|
| MBT3904DW1T1 MBT3904DW1T1_D ON0485 |
SOT-63/SC-8 CASE 419B STYLE 1
From old datasheet system
|
ON Semi
|
| BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MBD110DWT1_D ON0400 |
CASE 419B-1, STYLE 6 SOT-363
From old datasheet system
|
ON Semi
|
| BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| 2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
| MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
