| PART |
Description |
Maker |
| MT88E46 MT88E46AS |
Bellcore Compliant Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO20
Dual inputs (tip/ring and 4 wire) Bellcore compliant Extended Voltage Calling Number Identification Circuit for CID, CIDCW and CWD (Type 2 and 2.5)
|
Zarlink Semiconductor, Inc.
Zarlink Semiconductor Inc.
|
| SC88E43 SC88E43S |
EXTENDED VOLTAGE CALLING NUMBER IDENTIFICATION CIRCUIT 2
|
ETC
|
| MT88E45 |
Dual inputs (tip/ring and 4 wire) Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E39ASR1 |
Calling Number Identification Circuit TELEPHONE CALLING NO IDENT CKT, PDSO16
|
Zarlink Semiconductor, Inc.
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125
256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4 |
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
