| PART |
Description |
Maker |
| MT88E43B |
Extended Voltage Calling Number Identification Circuit (ECNIC)(扩展电压主叫识别电路（接收传送的物理层信号）)
|
Mitel Networks Corporation
|
| MT88E43B |
Extended Voltage Calling Number Identification Circuit for CLIP, CID and CIDCW applications (Type 2)
|
Zarlink Semiconductor
|
| MT88E45BS MT88E45BN1 |
4-Wire Calling Number Identification Circuit 2 (4-Wire CNIC2) TELEPHONE CALLING NO IDENT CKT, PDSO20
|
Zarlink Semiconductor, Inc.
|
| MT8841 MT8841AE MT8841AN MT8841AS |
CMOS Calling Number Identification Circuit
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| FL-3348-XXS FL-3345-XF FL-3340 FL-3345-VF FL-3340- |
400 W Transient Voltage Suppressors 28 V SMA Bidirectional
1500 W Transient Voltage Suppressor 9.0 V SMC Unidirectional
/-1C TDM Extended Temp Range I.C. 4Ch 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
1310 nm LASER DIODE MODULES UNCOOLED MQW-FP LD WITH PIGTAIL 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
/-1C TDM Extended Temp Range I.C. 4Dh 1310 nm激光二极管模块致冷量子阱，计划生育与辫子劳工处
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| K4E170811D K4E170812D K4E160811D K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E661611D-TC60 K4E641611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
