PART |
Description |
Maker |
BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLW898 |
UHF linear power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V. Philips Semiconductors
|
MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... Advanced Power Technology
|
2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC. UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 30mA的一(c)|的SOT - 346
|
NEC[NEC] NEC Corp. NEC, Corp.
|
PBR941 934043060215 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR UHF wideband transistor
|
Philips Semiconductors NXP Semiconductors
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
BFG10WX_1 BFG10W/X BFG10WX-2015 BFG10WX-15 |
TRANSISTOR | BJT | NPN | 250MA I(C) | SOT-343 From old datasheet system UHF power transistor
|
Philips Quanzhou Jinmei Electro...
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLU20_12 BLU20/12 |
UHF power transistor
|
Philips Semiconductors
|
BLV103 |
UHF power transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|