| PART |
Description |
Maker |
| NE57810 NE57810S |
Advanced DDR memory termination power with external reference voltage in
|
NXP Semiconductors
|
| TE28F640B3XXX GE28F160B3BC70 GE28F160B3TC80 GE28F0 |
(TE28F Series) 3 Volt Advanced Boot Block Flash Memory
3 Volt Advanced Boot Block Flash Memory 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
3 Volt Advanced Boot Block Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
3 Volt Advanced Boot Block Flash Memory 1M X 8 FLASH 2.7V PROM, 90 ns, PBGA46
3 Volt Advanced Boot Block Flash Memory 4M X 16 FLASH 3V PROM, 100 ns, PBGA48
|
Intel Corporation
Intel, Corp.
|
| BR34E02NUX-WE2 BR34E02FVT-WTR BR34E02FVT-WE2 |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| PFM-541I |
Onboard DDR 333 MHz Memory 256 MB
|
AAEON Technology
|
| TBOX313-835-FL-16 |
High performance DDR-1333 4 GB memory onboard
|
Axiomtek Co., Ltd.
|
| EV20073DH-00A |
2A, 1.30V ?6.0V DDR Memory VTT Termination Regulator
|
Monolithic Power System...
|
| CM3131-11SH CM3131 CM3131-01SB CM3131-01SH CM3131- |
Triple Linear Voltage Regulator for DDR-I/-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| PM8908 PM8908TR |
Monolithic buck converter for DDR memory termination
|
STMicroelectronics
|
| JS28F008 |
(JS28Fxxx) Advanced Boot Block Flash Memory
|
Intel
|
| TPS51116 |
Complete DDR & DDR2 Memory Power
From old datasheet system
|
ti
|
