| PART |
Description |
Maker |
| IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
| IRF5NJ540 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*)
SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| IRFS59N10D IRFSL59N10D IRFB59N10D IRFB59N10 IRFS59 |
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)
Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
IRF[International Rectifier]
|
| IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V
N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Samsung semiconductor
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRF9520 FN2281 |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRFR5410 IRFU5410 IRFRU5410 IRFR5410TRL IRFR5410TR |
-100V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| IRF9140 |
-100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)
|
International Rectifier
|
| DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5
100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5
100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| IRF7350 IRF7350N IRF7350P IRF7350TR |
-100V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -100V)
|
IRF[International Rectifier]
|
