| PART |
Description |
Maker |
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| IRF7342D2 IRF7342D2TR |
-55V FETKY - MOSFET and Schottky Diode in a SO-8 package - 55VFETKY - MOSFET和肖特基二极管的SO - 8封装
FETKY MOSFET & Schottky Diode
|
International Rectifier, Corp.
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| IRF7807D2PBF |
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| IRF7422D2PBF |
FETKY?MOSFET &Schottky Diode
FETKY⑩MOSFET &Schottky Diode
|
International Rectifier
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| IXKF40N60SCD1 |
CONN 60POS .1X.1 IDC RIBBON PCB 38 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC
|
Vicor, Corp.
IXYS[IXYS Corporation]
|
| FDFS2P753Z |
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| SI4833DY |
P-Channel, 30-V (D-S) Rated MOSFET Schottky Diode
P-Channel 30-V (D-S) MOSFET with Schottky Diode
|
Vishay Siliconix
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
|
