PART |
Description |
Maker |
IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V N-Channel Power MOSFETs/ 20 A/ 60-100 V CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲,60-100 V
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IRFR120 IRFU120 FN2414 |
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA (IRFR120 / IRFU120) N-Channel Power MOSFETs From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IRF520 MTP10N10 MTP10N08 IRF522 IRF522R IRF123 IRF |
IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs N-Channel Power MOSFETs, 11 A, 60-100 V Trans MOSFET N-CH 100V 7A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
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IXFH11N80 IXFH13N80 IXFM13N80 IXFM11N80 |
HiPerFET Power MOSFETs 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
IRF6723M2DTR1P IRF6723M2DTR1PBF IRF6723M2DTRPBF IR |
15 A, 30 V, 0.0066 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters Replaces Two Discrete MOSFETs
|
International Rectifier
|
IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
|
IXYS Corporation
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