| PART |
Description |
Maker |
| 2SD1088 |
POWER TRANSISTORS(6A/250V/30W)
POWER TRANSISTORS(6A,250V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| STK4152 STK4152II |
From old datasheet system
AF Power Amplifier (Split Power Supply) (30W 30W min, THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|
| LA4725 1531 |
2-Channel BTL Power Amplifier (30W 30W) with Standby Switch for Car Stereos(用于汽车立体声双BTL功率放大器（30W 30W，带备用开关）)
Monolithic Linear IC
From old datasheet system
2-Channel BTL Power Amplifier 30 W 30 W with Standby Switch for Car Stereos
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| STK433-730-E |
2-channel class AB audio power IC, 30W 30W
|
Sanyo Semicon Device
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| IRF634S IRF634STRL IRF634STRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
Power MOSFET(Vdss=250V/ Rds(on)=0.45ohm/ Id=8.1A)
|
IRF[International Rectifier]
|
| IRFR224 IRFU224 |
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
HEXFET? Power MOSFET
|
International Rectifier
|
| 5962-05238 5962-05240 5962-05241 5962-05242 5962-0 |
30W Total Output Power 28 Vin 1.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05238
30W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05240
30W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05241
30W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-05242
30W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a LS Package. DLA Number 5962-06241
30W Total Output Power 28 Vin 2.5 Vout Single DC-DC Radiation Hardened Converter in a LS Package.
|
International Rectifier
|
| FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
