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Q67006 LVC1G0 67BZI 1002C LTC3718 PDBFS500 AB22A 79L05A
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For TRR Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    8ETX06-1 8ETX06-1TRL 8ETX06-1TRR 8ETX06S 8ETX06STRL 8ETX06STRR

Vishay Siliconix
Part No. 8ETX06-1 8ETX06-1TRL 8ETX06-1TRR 8ETX06S 8ETX06STRL 8ETX06STRR
Description Hyperfast Rectifier, 8 A FRED PtTM

File Size 121.14K  /  7 Page

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Renesas Electronics Corporation

Part No. RJU1CF00DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

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HUA FENG CIRCUIT





    IRF[International Rectifier]
Part No. 30CTH02S 30CTH02-1 30CTH02 30CTH02FP 30CTH02-1TRRPBF
Description 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-262AA
Hyperfast Rectifier

File Size 289.75K  /  10 Page

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Renesas Electronics Corporation

Part No. RJU65F25DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    30ETH06-1 30ETH06-1TRL 30ETH06-1TRR 30ETH06STRL

Vishay Siliconix
Part No. 30ETH06-1 30ETH06-1TRL 30ETH06-1TRR 30ETH06STRL
Description Hyperfast Rectifier, 30 A FRED PtTM

File Size 120.60K  /  7 Page

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Renesas Electronics Corporation

Part No. RJU1CF07DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

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    IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR

IRF[International Rectifier]
Part No. IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(IRFZ44L / IRFZ44S) HEXFET Power MOSFET

File Size 320.84K  /  10 Page

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Renesas Electronics Corporation

Part No. RJU1CF08DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

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    IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL

IRF[International Rectifier]
Part No. IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL
Description 600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB

File Size 199.42K  /  11 Page

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Renesas Electronics Corporation

Part No. RJU1CF04DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    IRF[International Rectifier]
Part No. IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30KD-STRL
Description 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 223.21K  /  10 Page

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Renesas Electronics Corporation

Part No. RJU1CF05DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC20UDS IRG4BC20UD-S IRG4BC20UD-STRR IRG4BC20UD-STRL
Description 320 x 240 pixel format, LED or CFL Backlight 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.85V,@和VGE \u003d 15V的,集成电路\u003d 6.5A
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6.5A I(C) | TO-263AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

File Size 233.71K  /  11 Page

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Renesas Electronics Corporation

Part No. RJU1CF01DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    IRG4BC20KDS IRG4BC20KD-S IRG4BC20KD-STRL IRG4BC20KD-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC20KDS IRG4BC20KD-S IRG4BC20KD-STRL IRG4BC20KD-STRR
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管,超快软恢复二极管VCES和\u003d 600V电压的Vce(on)典\u003d 2.27V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A)
600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package

File Size 220.90K  /  10 Page

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Renesas Electronics Corporation

Part No. RJU65F26DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    IRF634NL IRF634NS IRF634NSTRR

International Rectifier, Corp.
Part No. IRF634NL IRF634NS IRF634NSTRR
Description Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.435ohm,身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 8A条(丁)|63AB

File Size 300.99K  /  11 Page

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Renesas Electronics Corporation

Part No. RJU1CF02DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

    International Rectifier, Corp.
Part No. IRL520NL IRL520NSTRR
Description 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package 100V的单N沟道HEXFET功率MOSFET的采用TO - 262封装

File Size 186.56K  /  10 Page

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Renesas Electronics Corporation

Part No. RJU65F27DWA-00#W0
Description High-performance Fast Recovery Diodes with Low VF and High-speed trr for Increasing Device Efficiency
Tech specs    

Official Product Page

For TRR Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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Part: TRR2A05S00
Maker: TTI
Pack: SOP-8
Stock: 169
Unit price for :
    50: $7.85
  100: $7.45
1000: $7.06

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