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  to-262 Datasheet PDF File

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    K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6E0808C1E K6E0808C1E-C K6E0808C1E-C10 K6E0808C1E-C12 K6E0808C1E-C15 K6E0808C1E-I K6E0808C1E-I10 K6E0808C1E-I12 K6E0808C1E-I15 K6E0808C1E-L K6E0808C1E-P
OCR Text ...lease with Preliminary. Release to Final Data Sheet. 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. Draft Data Aug. 1. ...262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C...
Description 32K x 8 Bit High-Speed CMOS Static RAM 32K的8位高速CMOS静态RAM

File Size 180.35K  /  9 Page

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    KM23C4100DET KM23C4100DT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
http://
Part No. KM23C4100DET KM23C4100DT
OCR Text ...tem Voltage on Any Pin Relative to VSS Temperature Under Bias Storage Temperature Operating Temperature Symbol VIN TBIAS TSTG TA Rating -0.3 to +7.0 -10 to +85 -55 to +150 0 to +70 -20 to +85 CMOS MASK ROM Unit V C C C C Remark KM23C410...
Description 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

File Size 71.59K  /  4 Page

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    LC372100PM LC372100PM-10LV LC372100PM-20LV LC372100PP LC372100PP-10LV LC372100PP-20LV LC372100PT LC372100PT-10LV LC37210

Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LC372100PM LC372100PM-10LV LC372100PM-20LV LC372100PP LC372100PP-10LV LC372100PP-20LV LC372100PT LC372100PT-10LV LC372100PT-20LV
OCR Text ...ed access in 3.3-V systems (3.0 to 3.6 V) with a 150-ns access time and a 60-ns OE access time. These ROMs adopt the JEDEC standard pin assignment which allows them to replace EPROM easily. To prevent bus line collisions in multi-bus microc...
Description CAP 10UF 16V 10% TANT SMD-6032-28 TR 2迈可262144字8位)掩模ROM内部时钟硅门
CAP 10UF 16V 10% TANT SMD-6032-28 TR-13 2迈可262144字8位)掩模ROM内部时钟硅门
CAP 10UF 16V 20% TANT SMD-3528-21 TR-13 2迈可262144字8位)掩模ROM内部时钟硅门
2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

File Size 77.94K  /  5 Page

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    LP62S16256E-I LP62S16256EU-55LLI LP62S16256EU-70LLI LP62S16256EV-55LLI LP62S16256EV-70LLI

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP62S16256E-I LP62S16256EU-55LLI LP62S16256EU-70LLI LP62S16256EV-55LLI LP62S16256EV-70LLI
OCR Text ...istory Change VCCmax from 3.3V to 3.6V Add product family and 55ns specification Issue Date January 25, 2002 Remark (January, 200...262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 165.09K  /  15 Page

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    LP62S16256E-T LP62S16256EU-55LLT LP62S16256EU-70LLT LP62S16256EV-55LLT LP62S16256EV-70LLT

AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
Part No. LP62S16256E-T LP62S16256EU-55LLT LP62S16256EU-70LLT LP62S16256EV-55LLT LP62S16256EV-70LLT
OCR Text ...istory Change VCCmax from 3.3V to 3.6V Add product family and 55ns specification Issue Date January 25, 2002 Remark (January, 200...262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 165.07K  /  15 Page

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    LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT

AMIC Technology, Corp.
AMICC[AMIC Technology]
Part No. LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT
OCR Text to 3.3V n Access times: 70 ns (max.) n Current: Very low power version: Operating: 40mA (max.) Standby: 10A (max.) n Full static operation, ...262,144 words by 16 bits and operates on low power voltage from 2.7V to 3.3V. It is built using AMIC...
Description 256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM

File Size 157.80K  /  14 Page

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    LX8815 LX8815-2500CDF LX8815-2800CDF LX8815-3300CDF LX8815-3318CDF LX8815-3325CDF

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. LX8815 LX8815-2500CDF LX8815-2800CDF LX8815-3300CDF LX8815-3318CDF LX8815-3325CDF
OCR Text ...les. Each channel can supply up to one amp independently with a regulator design optimized for system efficiency by consuming minimal ground...262 1.269 0.2 0.4 1.3 3 5 5 V %V1 %V1 V A mA V %V1 %V1 V A mA A mA dB %V1 C ADJUSTABLE ...
Description Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 无电容,NMOS管,150mA的低压差稳压器的反向电流保护
Dual Channel 1A Low Dropout Regulator

File Size 64.46K  /  5 Page

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    M11B416256A M11B416256A-25J M11B416256A-25T M11B416256A-28J M11B416256A-28T M11B416256A-30J M11B416256A-30T M11B416256A-

Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
N.A.
ETC
Electronic Theatre Controls, Inc.
Part No. M11B416256A M11B416256A-25J M11B416256A-25T M11B416256A-28J M11B416256A-28T M11B416256A-30J M11B416256A-30T M11B416256A-35J M11B416256A-35T M11B416256A-40J M11B416256A-40T M11B416256
OCR Text ...GS Voltage on Any pin Relative to Vss ... ......-1V to +7V Operating Temperature, TA (ambient) ....0 C to +70 C Storage Temperature (plastic) ..........-55 C to +150 C Power Dissipation .......................................1.43W Short Ci...
Description 256 K x 16 DRAM EDO PAGE MODE

File Size 371.74K  /  15 Page

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    M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M2

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M27C2001-10C6X M27C2001-10F1TR M27C2001-10F1X M27C2001-10F6TR M27C2001-10F6X M27C2001-10L1TR M27C2001-10L1X M27C2001-10L6TR M27C2001-10L6X M27C2001-10N1TR M27C2001-10N1X M27C2001-10N6TR M27C2001-10N6X M27C2001-10XB1TR M27C2001-10XB1X M27C2001-10XB6TR M27C2001-10XB6X M27C2001-10XC1TR M27C2001-1 2383 M27C2001-20XF1TR M27C2001-20XF1X M27C2001-20XF6TR M27C2001-20XF6X M27C2001-12XC6TR M27C2001-12XC6X M27C2001-15XN1TR M27C2001-15XN1X M27C2001-25F6TR M27C2001-25F6X M27C2001-12XB1TR M27C2001-12XB1X M27C2001-12XB6TR M27C2001-12XB6X M27C2001-12XC1TR M27C2001-25N6TR M27C2001-25N6X M27C2001-15XN6TR M27C2001-15XN6X M27C2001-15XB1TR M27C2001-15XB1X M27C2001-15XC1TR M27C2001-15XC1X M27C2001-20L1TR M27C2001-20L1X M27C2001-20L6TR M27C2001-20L6X M27C2001-25B1TR M27C2001-25B1X M27C2001-20XB1TR M27C2001-20XB1X M27C2001-20XB6TR M27C2001-20XB6X M27C2001-20XC1TR M27C2001-20XC1X M27C2001-20XC6TR M27C2001-25XN1TR M27C2001-25XN1X M27C2001-25XN6TR M27C2001-25XN6X M27C2001-10XC6TR M27C200199 M27C2001-10XC6X M27C2001-12L1TR M27C2001-12L1X M27C2001-12L6TR M27C2001-12L6X M27C2001-70XC6TR M27C2001
OCR Text ...arent lids which allow the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. For applications where the content is programmed only ...
Description    2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
2 Mbit 256Kb x 8 UV EPROM and OTP EPROM
From old datasheet system
1 Mbit 128Kb x8 UV EPROM and OTP EPROM

File Size 112.40K  /  16 Page

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    M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP
OCR Text ...eneral products and are subject to change without notice. DESCRIPTION The M5M4V16G50DFP is a 2-bank x 262,144-word x 32-bit Synchronous GRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M...
Description From old datasheet system
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM

File Size 165.49K  /  33 Page

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