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to-247 isowatt218 Datasheet PDF File

For to-247 isowatt218 Found Datasheets File :: 58 Search Time::1.828ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	STH15NA50 STH15NA50FI STW15NA50 STH15NA50_FI
OCR Text	...4 ID 14.6 A 9.3 A 14.6 A to-247 TYPICAL RDS(on) = 0.33 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD ...
Description	N-CHANNEL Power MOS MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
File Size	241.88K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STH60N10 STH60N10FI STW60N10 STH60N10_FI
OCR Text	... 0.025 ID 60 A 36 A 60 A to-247 TYPICAL RDS(on) = 0.02 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIE...
Description	N-CHANNEL MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	244.64K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STH8NB90FI STH8NB90 H8NB90FI STW8NB90
OCR Text	to-247/isowatt218 PowerMeshTM MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 < 1.45 ID 8A 5A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY...
Description	N-CHANNEL 900V - 1.1 OHM - 8A - to-247/isowatt218 POWERMESH MOSFET N-CHANNEL 900V - 1.1 ohm - 8 A to-247/isowatt218 PowerMesh MOSFET N-CHANNEL 900V - 1.1 ohm - 8 A to-247/isowatt218 PowerMesh⑩ MOSFET N-CHANNEL MOSFET
File Size	310.59K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STH10NA50 STH10NA50FI STW10NA50
OCR Text	...0.8 ID 9.6 A 5.6 A 9.6 A to-247 TYPICAL RDS(on) = 0.7 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD ...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNEL Power MOS MOSFET
File Size	241.67K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
Part No.	STH10NC60FI STW10NC60 STH10NC60
OCR Text	to-247/isowatt218 PowerMeshTMII MOSFET TYPE STW10NC60 STH10NC60FI s s s s s VDSS 600 V 600 V RDS(on) < 0.75 < 0.75 ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAG...
Description	N-CHANNEL 600V - 0.6ohm - 10A - to-247/isowatt218 PowerMesh?┥I MOSFET N-CHANNEL 600V - 0.6ohm - 10A - to-247/isowatt218 PowerMesh?II MOSFET N-CHANNEL 600V - 0.6 OHM - 10A - to-247/isowatt218 POWERMESH MOSFET N-CHANNEL 600V - 0.6ohm - 10A - to-247/isowatt218 PowerMeshII MOSFET N-CHANNEL Power MOSFET N-CHANNEL Power MOS MOSFET N-CHANNEL 600V - 0.6ohm - 10A - to-247/isowatt218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A to-247/isowatt218 PowerMesh第二MOSFET的⑩ N-CHANNEL 600V - 0.6 OHM - 10A - to-247/isowatt218 POWERMESH MOSFET
File Size	336.30K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics Advanced Analogic Technologies STMICROELECTRONICS[STMicroelectronics]
Part No.	STH8NA80FI STH8NA80 STW8NA80 4873
OCR Text	...YPICAL RDS(on) = 1.3 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES...247 isowatt218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 30 o Un...
Description	From old datasheet system OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
File Size	47.59K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STH12NA60FI
OCR Text	...6 < 0.6 ID 12 A 7A 12 A to-247 TYPICAL RDS(on) = 0.44 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD ...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
File Size	401.81K / 11 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI
OCR Text	...6 < 0.6 ID 12 A 7A 12 A to-247 TYPICAL RDS(on) = 0.44 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD ...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
File Size	241.66K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
Part No.	STW5NA100 5367 STH5NA100FI STH5NA100
OCR Text	...YPICAL RDS(on) = 2.9 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD to-247 3 2 1 3 2 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWIT...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
File Size	98.06K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STW5NA90 5612 STH5NA90FI
OCR Text	...PICAL RDS(on) = 2.1 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD to-247 3 2 1 3 2 1 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWI...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS From old datasheet system
File Size	53.72K / 6 Page	View it Online	Download Datasheet

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