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  rg-174 Datasheet PDF File

For rg-174 Found Datasheets File :: 571    Search Time::2.11ms    
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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... C 125C I C = 75A 100 RG = 15Ohm RG1=15;RG2 = 0 VGE = 15V VCC = 720V IC = 150 A IC = 75 A IC=37.5 A = 37A 35 10 30 25 10 20 30 40 50 RG , Gate Resistance (Ohm) ( ) 1 -60 -40 -20 0 20 40 60 80 100 ...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ... VDD = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...174 showing the A G integral reverse --- --- 700 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...174 260 ns TJ = 25C, IF = 43A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (tu...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...- VDD = 75V --- ID = 12A ns --- RG = 5.1 --- RD = 5.9, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (tu...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    R2658P R2658

HAMAMATSU[Hamamatsu Corporation]
Part No. R2658P R2658
OCR Text ... C1 SIGNAL GND SIGNAL OUTPUT rg-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 3.5 9 R9 8 R8 5 29 4 DY5 DY4 R6 R to R10 : 330k C1 to C3 : 0.01F R5 TACCA0064EA 18 4 POTTING COMPOUND Warning-Personal Safet...
Description PHOTOMULTIPLIER TUBES

File Size 69.27K  /  4 Page

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    2SC5343S

AUK corp
Part No. 2SC5343S
OCR Text ...=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10K Min. Typ. Max. 60 50 5 70 80 2 0.1 0.1 700 0.25 3.5 10 Unit V V V A A V MHz pF dB VCE(sat) * : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700 KST-2034-004 2 ...
Description General small signal amplifier (General small signal amplifier)

File Size 211.47K  /  4 Page

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    APT50M65 APT50M65B2FLL APT50M65LFLL

ADPOW[Advanced Power Technology]
Part No. APT50M65 APT50M65B2FLL APT50M65LFLL
OCR Text ...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 67 268 1.3 5 270 540 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 1.8 6.2 16 29 Tj = 125C Tj = ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.95K  /  2 Page

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    IXTN21N100 IXTK21N100

IXYS[IXYS Corporation]
Part No. IXTN21N100 IXTK21N100
OCR Text ...S = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 50 100 40 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 100 TO-264 AA TO-264 AA m...174 0.191 0.987 0.004 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by ...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs

File Size 136.10K  /  4 Page

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For rg-174 Found Datasheets File :: 571    Search Time::2.11ms    
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