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20060 50A02SS B2912BA1 33EG6 TB406 786018 E8801JEE 01M50
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    AON7452

Alpha & Omega Semiconductors
Part No. AON7452
OCR Text ...hout notice. body diode reverse recovery charge i f =2.5a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime forward transcon...
Description 100V N-Channel MOSFET

File Size 243.29K  /  7 Page

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    STGB20H60DF STGP20H60DF STGF20H60DF

ST Microelectronics
STMicroelectronics
Part No. STGB20H60DF STGP20H60DF STGF20H60DF
OCR Text ...-circuit rated ? ultrafast soft recovery antiparallel diode applications ? motor control ? ups, pfc description this device is an igbt developed using an advanced proprietary trench gate and field stop structure. this igbt series offers t...
Description 600 V, 20 A high speed trench gate field-stop IGBT

File Size 1,826.19K  /  22 Page

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    NTMS10P02R2-D NTMS10P02R2/D

Electronic Theatre Controls, Inc.
ON Semiconductor
Part No. NTMS10P02R2-D NTMS10P02R2/D
OCR Text ...Diode Exhibits High Speed, Soft recovery Avalanche Energy Specified SO-8 Mounting Information Provided http://onsemi.com P-Channel D G S Applications * Power Management in Portable and Battery-Powered Products, i.e.: Cellular ...
Description HDTMOS3e Single SO-8 HDTMOS3e单的SO - 8
HDTMOS3e Single SO-8 P-Channel Enhancement-Mode Power MOSFET

File Size 105.84K  /  8 Page

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    MMSF3350-D

ON Semiconductor
Part No. MMSF3350-D
OCR Text ...ce diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in po...
Description WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products

File Size 137.16K  /  12 Page

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    FB190SA10

Vishay Siliconix
Part No. FB190SA10
OCR Text ...rgy e ar (1) 48 mj peak diode recovery dv/dt dv/dt (3) 5.7 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c insulation withstand voltage (ac-rms) v iso 2.5 kv mounting torque m4 screw 1.3 nm www.vis...
Description Power MOSFET, 190 A

File Size 181.96K  /  9 Page

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Part No. UF2006FCT
OCR Text ...h surge capacity. ? ultra fast recovery times, high voltage. ? in compliance with eu rohs 2002/95/ec directives ultrafast recovery rectifiers notes: 1. measured at 1 mhz and applied reverse voltage of 4.0 vdc. 2. reverse recovery test con...
Description 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 49.06K  /  2 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS9N90FT-O-F-N-B
OCR Text ... IAR EAR 3 dv/dt Peak Diode recovery dv/dtnote 3 PD TC=25 -Derate above 25 TJTSTG 67.9 W Power Dissipation 0.54 W/ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55+150 ...
Description N-CHANNEL MOSFET

File Size 845.36K  /  8 Page

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