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241618 REEL1 91000 T421003 MAX4364E G4PF50 06N60E 17CXTB
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  ohm 100 Datasheet PDF File

For ohm 100 Found Datasheets File :: 30394    Search Time::2.062ms    
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    AD5235 AD5235BRU25 AD5235BRU250

ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
Part No. AD5235 AD5235BRU25 AD5235BRU250
OCR Text ohm Terminal Resistance with 50ppm/C Tempco Nonvolatile Memory Preset SPI Compatible Serial Data Input with Readback Function Increment/Decr...100 Units LSB LSB % ppm/C DC CHARACTERISTICS RHEOSTAT MODE Specifications apply to all VRs ...
Description Audio digital potentiometers DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16
Nonvolatile Memory/ Dual 1024 Position Digital Potentiometers
RES MF 1/8W 160K 1% 2PPM
Nonvolatile Memory, Dual 1024 Position Digital Potentiometers

File Size 100.47K  /  10 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...tal base plate * RG on,min = 27 ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol...100 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 500 W + 150 -55 ... + 150 0.25 ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...25 C I C = 13A 10 10 RG = ohm VGE = 15V VCC = 480V IC = 26A Total Switching Losses (mJ) Total Switching Losses (mJ) IC = 13A ...100 120 140 160 RG , Gate Resistance (ohm) RG , Gate Resistance ( ) T J, Junction Temperature...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text .... 0.04 RDS(ON), ON-RESISTANCE (ohm) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 11.5A VGS = 10V 1.4 ID = 6A 0.03 1 ...100 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Re...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ... 1000 RG1=15;RG2 = 0 G = ohm VGE = 15V VCC = 720V 100 IC = 200 A IC = 100 A IC = 50 A 40 10 30 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (ohm) TJ , Junction...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... 1000 RG1=15;R G2 = 0 G = ohm VGE = 15V VCC = 720V IC = 250 A 100 60 IC = 125 A IC = 62.5 A 50 40 0 10 20 30 40 50 ( RG , Gate Resistance (ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ ...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...100 RG1=15;R G2 = 0 G = ohm VGE = 15V VCC = 720V IC = 100 A IC = 50 A IC = 25 A 20 10 18 16 14 0 10 20 30 40 50 ( RG , Gate Resistance (ohm)) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 T...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... 40 50 RG , Gate Resistance (ohm) ( ) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanc...100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 4.1A, (Figures 8, 9) - gfs td(ON) t...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanc...100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 8A, (Figures 8, 9) - gfs td(ON) tr td(...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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