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Motorola
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| Part No. |
MRF18060BSR3 MRF18060BLSR3 mrf18060br3 MRF18060B
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| OCR Text |
mrf18060br3 N-Channel Enhancement-Mode Lateral MOSFETs MRF18060BLSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET... |
| Description |
1.90?1.99 GHz, 60 W, 26 V Lateral N?Channel RF Power MOSFET
From old datasheet system
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| File Size |
350.53K /
8 Page |
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it Online |
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Motorola
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| Part No. |
MRF18060B
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| OCR Text |
mrf18060br3 N-Channel Enhancement-Mode Lateral MOSFETs MRF18060BS Designed for PCN and PCS base station applications with frequencies from MRF18060BSR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET Li... |
| Description |
MRF18060B, mrf18060br3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
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| File Size |
193.88K /
8 Page |
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it Online |
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Motorola, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF18060B MRF18060BLSR3 mrf18060br3 MRF18060BSR3
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| OCR Text |
...ement - Mode Lateral MOSFETs
mrf18060br3 MRF18060BSR3 MRF18060BLSR3
1.90 - 1.99 GHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1 NI - 780 mrf18060br3
CASE 465A - 06, ST... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
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| File Size |
486.59K /
8 Page |
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it Online |
Download Datasheet |
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