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  id-74a Datasheet PDF File

For id-74a Found Datasheets File :: 80    Search Time::1ms    
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    FDP120N10

FAIRCHILD SEMICONDUCTOR CORP
Part No. FDP120N10
OCR Text ...(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A * Fast Switching Speed * Low Gate Charge * High Performance RDS(on) Trench Technology for Extremely Low Application * DC to DC Convertors / Synchronous Rectification * High Power and Current H...
Description 74 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼?
N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ

File Size 639.40K  /  8 Page

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    APT20M34BLL04 APT20M34SLL APT20M34BLL APT20M34BLL_04

ADPOW[Advanced Power Technology]
Part No. APT20M34BLL04 APT20M34SLL APT20M34BLL APT20M34BLL_04
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...74A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 74A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description POWER MOS 7 MOSFET

File Size 198.37K  /  5 Page

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    APT20M34BFLL04 APT20M34SFLL APT20M34BFLL APT20M34BFLL_04

ADPOW[Advanced Power Technology]
Part No. APT20M34BFLL04 APT20M34SFLL APT20M34BFLL APT20M34BFLL_04
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...74A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 74A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ...
Description POWER MOS 7 R FREDFET

File Size 199.12K  /  5 Page

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    2SK3825

Sanyo Semicon Device
Part No. 2SK3825
OCR Text ...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 74 296 1.75 75 150 --55 to +1...74A *2 L50H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdo...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 38.41K  /  4 Page

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    2SK3818

Sanyo Semicon Device
Part No. 2SK3818
OCR Text ...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 74 296 1.65 75 150 --55 to +1...74A *2 L100H, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakd...
Description High Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 40.71K  /  4 Page

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    FDB120N10

Fairchild Semiconductor
Part No. FDB120N10
OCR Text ID = 74A * Fast Switching Speed * Low Gate Charge * High Performance Trench Technology for Extremely Low RDS(on) * High Power and Current Handling Capability * RoHS Compliant tm PowerTrench(R) MOSFET Description This N-Channel MO...
Description N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ
N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼?

File Size 500.14K  /  8 Page

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    ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z
OCR Text ...ntinuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 4.5V) TO-220 Ratings 30 20 75 74 20 Figure 4 145 0.97 -55 to 175 Units ...74A, VGS = 4.5V 1 3 V 0.0036 0.0045 0.0060 0.0075 Dynamic Characteristics CISS COSS CRSS Qg(TOT...
Description 75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a>
N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз
N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm

File Size 192.67K  /  11 Page

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    BBL4001

Sanyo Semicon Device
Part No. BBL4001
OCR Text ...che Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 74 296 2.0 35 150 --55 to +15...74A VDS=30V, VGS=10V, ID=74A VDS=30V, VGS=10V, ID=74A IS=74A, VGS=0V Ratings min 1.2 32 53 4.7 7.0 6...
Description General-Purpose Switching Device Applications

File Size 266.29K  /  5 Page

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    APT20M34BLL APT20M34SLL

ADPOW[Advanced Power Technology]
Part No. APT20M34BLL APT20M34SLL
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage BLL D3PAK TO-247 SLL * In...74A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.45K  /  2 Page

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