id-4.2a pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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id-4.2a Datasheet PDF File

For id-4.2a Found Datasheets File :: 6092 Search Time::2.593ms
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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	...e Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item ...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	...ximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating -30 ...4.6A 10 9 16 VDD= -25V, ID= -2A, VGEN= -10V, RG=6 RL=12.5 VGS =0V, VDS =-25V Frequency = 1.0MHZ 17 7...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...ent Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces e...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3...4 -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 6.9 14 6.1 12 1.0 2.0 1.7 3.4 1.8 3.5 1.1 2.2 6.2 12 9.7 19 ...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 1...4.5V, ID = 1.0A --- V VDS = VGS , ID = 250A --- S VDS = 15V, ID = 3.5A 2.0 VDS = 24V, VGS = 0V A 25...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	... = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...4. It provides the highest power capability and the lowest possible onresistance in any existing sur...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	... = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...S = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...4. It provides the highest power capability and the lowest possible onresistance in any existing sur...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...S = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to...4.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.05 --- --- --- --...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

For id-4.2a Found Datasheets File :: 6092 Search Time::2.593ms
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