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Semtech Corporation
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| Part No. |
SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6
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| Description |
high voltage,high current,high Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
high voltage,high current,high Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY high voltage, high current RECTIFIER
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| File Size |
113.64K /
2 Page |
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it Online |
Download Datasheet
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML100W18
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| Description |
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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| File Size |
25.75K /
2 Page |
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it Online |
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Vishay Siliconix
Vishay Intertechnology,Inc.
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| Part No. |
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486
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| Description |
high Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; current, Id cont:4.5A; current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; voltage, Vds max:20V; Case style:SO-8; current, Id cont:5.6A; current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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| File Size |
52.89K /
7 Page |
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it Online |
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TT electronics Semelab Limited
Semelab(Magnatec)
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| Part No. |
SML100A9
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| Description |
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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| File Size |
20.76K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML80A12 SML100A9
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| Description |
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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| File Size |
20.46K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML80H12 SML100H11
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| Description |
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
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| File Size |
26.03K /
2 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
Sanyo Electric Co.,Ltd.
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| Part No. |
LB1231 LB1233 LB1232 LB1234
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| Description |
high-voltage, Large current Darligton Transistor Array
high-voltage, high- current Darlington Transistor Array
PERIPHERAL DRIVER,7 DRIVER,BIPOLAR,DIP,16PIN,PLASTIC
Septuple Peripheral Driver
From old datasheet system
high-voltage / high- current Darlington Transistor Array
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| File Size |
80.06K /
4 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
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| Part No. |
SML80H14
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| Description |
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
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| File Size |
26.04K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
SML50W40
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| Description |
N-Channel Enhancement Mode high voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE high voltage POWER MOSFETS
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| File Size |
25.74K /
2 Page |
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it Online |
Download Datasheet |
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