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  charge2.0 Datasheet PDF File

For charge2.0 Found Datasheets File :: 334    Search Time::2.203ms    
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    P3055LS

List of Unclassifed Manufacturers
ETC
NIKO-SEM
Part No. P3055LS
OCR Text ...Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time 2 2 2 Ciss Coss Crss Qg Qgs Q...0.5V(BR)DSS, VGS = 10V, ID = 6A VGS = 0V, VDS = 15V, f = 1MHz 450 200 60 15 2.0 7.0 6.0 6.0 20 5....
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 213.37K  /  4 Page

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    P06B03LV

List of Unclassifed Manufacturers
ETC[ETC]
Part No. P06B03LV
OCR Text ...18 5 nS 14 nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 2 Turn-On Delay Time Rise Time td(on) tr td(off) tf Turn-Off Delay T...0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.1...
Description Dual P-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 360.92K  /  5 Page

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    P0903BI

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. P0903BI
OCR Text ...Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time2 Rise Time 2 2 Ciss Coss Crss Qg Qgs Qg...0.9 70 200 0.043 50 150 1.3 A V nS A C Pulse test : Pulse Width 300 sec, Duty Cycle 2H. I...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor N沟道增强模式的逻辑电平场效应晶体管

File Size 126.68K  /  5 Page

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    P06P03LVG

List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Part No. P06P03LVG
OCR Text ...18 5 nS 14 nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 2 Turn-On Delay Time Rise Time td(on) tr td(off) tf Turn-Off Delay T...0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.35 0.1 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 mm Min. 0.5 0.1...
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 352.26K  /  5 Page

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    P2503BDG

List of Unclassifed Manufacturers
ETC[ETC]
Part No. P2503BDG
OCR Text ...1.3 7.4 nS nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 Turn-On Delay Time2 Rise Time 2 Turn-Off Delay Time2 Fall Time Cont...0.1 -55 C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 3...
Description From old datasheet system
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 283.52K  /  5 Page

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    P07D03LV

List of Unclassifed Manufacturers
NIKO-SEM
Part No. P07D03LV
OCR Text ...Transfer Capacitance Total Gate Charge2 Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time Rise Time2 Turn-Off Delay Time Fall Time2 ...0.5V(BR)DSS, VGS = 5V, ID = 7A VGS = 0V, VDS = 15V, f = 1MHz 830 185 80 9 2.8 3.1 5.7 10 18 5 nS ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 357.99K  /  5 Page

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    2N7091

SemeLAB
Seme LAB
Part No. 2N7091
OCR Text ...ate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source Turn-On Delay Turn-Off Delay Fall Time2 SOURCE - DRAIN DIODE...0 Min. Typ. Max. 1.8 80 Unit C/W Semelab Plc reserves the right to change test cond...
Description PCHANNEL ENHANCEMENT MODE TRANSISTOR
P-CHANNEL ENHANCEMENT MODE TRANSISTOR

File Size 31.36K  /  2 Page

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    WTN9973

Weitron Technology
Part No. WTN9973
OCR Text ...V,ID=1A,RD=30,RG=3.3 Total Gate Charge2 VDS=48V,VGS=4.5V,ID=3.9A Gate-Source Charge VDS=48V,VGS=4.5V,ID=3.9A Gate-Source Change VDS=48V,VGS=...0 0 1 2 3 4 5 6 5.0V 20 15 10 5 0 VG=3.0V VG=3.0V 7 8 0 1 FIG.1 Typical Outpu...
Description Surface Mount N-Channel Enhancement Mode Power MOSFET

File Size 568.38K  /  6 Page

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    IPB100N04S2L-03 IPP100N04S2L-03 SP0002-19062 SP0002-19065

Infineon Technologies AG
Part No. IPB100N04S2L-03 IPP100N04S2L-03 SP0002-19062 SP0002-19065
OCR Text ... 100 ns Reverse recovery charge2) 1) Q rr - 150 190 nC Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 220A at 25C. For detailed information see Application Note ANPS071E at www.in...
Description OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor

File Size 151.10K  /  8 Page

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    IPB100N06S3-03 IPP100N06S3-03 IPI100N06S3-03 SP0000-87992 SP0000-87980 SP0000-87982

Infineon Technologies AG
Part No. IPB100N06S3-03 IPP100N06S3-03 IPI100N06S3-03 SP0000-87992 SP0000-87980 SP0000-87982
OCR Text ... 60 ns Reverse recovery charge2) 1) Q rr - 95 - nC Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 223 A at 25C. For detailed information see Application Note ANPS071E at www.inf...
Description OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor

File Size 158.27K  /  8 Page

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For charge2.0 Found Datasheets File :: 334    Search Time::2.203ms    
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