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IXYS CORP
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Part No. |
IXFN80N50Q2
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OCR Text |
...transient 40 v i d25 t c = 25 c80a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ?... |
Description |
80 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
557.66K /
4 Page |
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it Online |
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ST Microelectronics
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Part No. |
P80NF55
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OCR Text |
...rrent (continuous) at t c =25 o c80a i d drain current (continuous) at t c = 100 o c57a i dm ( ? ) drain current (pulsed) 320 a p tot total dissipation at t c =25 o c 210 w derating factor 1.4 w/ o c e as ( 1 ) single pulse avalanche energy... |
Description |
Search --To STP80NF55
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File Size |
113.90K /
8 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB80NE06-10
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OCR Text |
...nt (continuous) at t c = 25 o c80a i d drain current (continuous) at t c = 100 o c57a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c dv/dt peak diode recovery voltage slope ... |
Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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File Size |
277.87K /
8 Page |
View
it Online |
Download Datasheet
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ST Microelectronics
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Part No. |
STP80NE06-10
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OCR Text |
...nt (continuous) at t c = 25 o c80a i d drain current (continuous) at t c = 100 o c57a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c dv/dt peak diode recovery voltage slope ... |
Description |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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File Size |
280.61K /
8 Page |
View
it Online |
Download Datasheet
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c80a Found Datasheets File :: 33 Search Time::0.969ms Page :: | <1> | 2 | 3 | 4 | |
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