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ADPOW[Advanced Power Technology]
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| Part No. |
APT6013JVR
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| OCR Text |
...6013JVR
100 ID, DRAIN CURRENT (amperes) VGS=6V, 7V, 10V & 15V ID, DRAIN CURRENT (amperes) 100 6V 80 VGS=7V, 10V & 15V 5.5V 60
80 5.5V 60...500
1 .5
TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTA... |
| Description |
POWER MOS V 600V 40A 0.130 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
70.89K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT6013JVR
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| OCR Text |
...013JVR
100
ID, DRAIN CURRENT (amperes)
VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (amperes)
100 6V 80 VGS=7V, 10V & 15V 5.5V 60
80 ...500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOU... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
67.42K /
4 Page |
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it Online |
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IXYS, Corp.
IXYS CORP
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| Part No. |
IXSQ10N60B2D1 IXSH10N60B2D1
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| OCR Text |
...45678910 v c e - volts i c - amperes v ge = 17v 9v 11v 13v 15v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 ...500 r g - ohms e o f f - millijoules i c = 5a t j = 125 o c v ge = 15v v ce = 480v i c ... |
| Description |
20 A, 600 V, N-CHANNEL IGBT TO-3P, 3 PIN
20 A, 600 V, N-CHANNEL IGBT, TO-247AD
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| File Size |
607.10K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT6015LVFR APT6015B2VFR
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| OCR Text |
...R_LVFR
100
ID, DRAIN CURRENT (amperes)
VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (amperes)
100 5.5V VGS=6V, 7V, 10V & 15V
80
80...500 Crss
1 .5
.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM ... |
| Description |
POWER MOS V FREDFET
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| File Size |
132.66K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT50M85JVR
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| OCR Text |
...M85JVR
150
ID, DRAIN CURRENT (amperes)
VGS=7V, 10V & 15V
ID, DRAIN CURRENT (amperes)
150
VGS=15V VGS=10V VGS=7V 6V
120 6V 90 ...500
Graph removed
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
70.70K /
4 Page |
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it Online |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B2LL04 APT50M75B2LLG
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| OCR Text |
...ance Curves
ID, DRAIN CURRENT (amperes)
Junction temp. (C) RC MODEL
120 100 80 60 40
APT50M75B2LL_LLL
15 &10V 8V 7.5V
0.0144
...500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 ... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
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| File Size |
162.79K /
5 Page |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IRFP460
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| OCR Text |
...
VGS=10V 9V 8V 7V 6V
ID - amperes
30 20
5V
ID - amperes
6V
20
5V
10
10 0
0
4
8
12
16
20
0 0 4...500
Crss
250
100 0 5 10 15 20 25
Gate Charge - nC
VDS - Volts
Figure 7. Gate Charge
... |
| Description |
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强MegaMOS功率MOSFET) 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-Channel Enhancement Mode MegaMOS Power MOSFET(最大漏源击穿电00V,导通电.27Ω的N沟道增强B>MegaMOS功率MOSFET)
MegaMOS - Power MOSFET
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| File Size |
75.82K /
4 Page |
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it Online |
Download Datasheet |
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