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Infineon
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| Part No. |
G03H1202
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 82)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...6a
4A
10W
Ptot,
2A
0W 25C
50C
75C
100C
125C
150C
0A 25C
50C
7... |
| Description |
High Speed 2-Technology
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| File Size |
405.50K /
10 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP02N120 SKB02N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
7A 60W 6a 50W 5A 4A 3A 2A 1A 0A 25C
40W
30W
20W
10W
0W 25C
IC, CO... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
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| File Size |
406.61K /
14 Page |
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it Online |
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Microsemi, Corp.
Advanced Power Technology
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| Part No. |
APT1201R2SFLL APT1201R2BFLLG APT1201R2SFLLG APT1001R6BFLLG
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| OCR Text |
...tive switching @ 25c v dd = 800v, v gs = 15v i d = 12a, r g = 5 ? inductive switching @ 125c v dd = 800v, v gs = 15v i d...6a i d = 6a v gs = 10v
apt1201r2bfll_sfll 050-7393 rev c 2-2009 v ds , drain-to-source vo... |
| Description |
12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 TO-247, 3 PIN
POWER MOS 7 R FREDFET
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| File Size |
158.23K /
5 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IPD80R360P7
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| OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesb...6a, t j =25c v gs =10v, i d =5.6a, t j =150c gate resistance r g - 1 - w f =250khz,opendrain ta... |
| Description |
800v CoolMOSa P7 Power Transistor
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| File Size |
1,168.05K /
13 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IPW80R360P7
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| OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesb...6a, t j =25c v gs =10v, i d =5.6a, t j =150c gate resistance r g - 1 - w f =250khz,opendrain ta... |
| Description |
800v CoolMOSa P7 Power Transistor
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| File Size |
1,145.24K /
13 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
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| Part No. |
IPA80R360P7
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| OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesb...6a, t j =25c v gs =10v, i d =5.6a, t j =150c gate resistance r g - 1 - w f =250khz,opendrain ta... |
| Description |
800v CoolMOSa P7 Power Transistor
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| File Size |
1,136.94K /
13 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW02N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
7A
60W
6a
50W
40W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISS... |
| Description |
Fast IGBT in NPT-technology
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| File Size |
307.92K /
11 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BT136S-800
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| OCR Text |
...itive peak off-state voltage --800v i tsm non-repetitive peak on-state current full sine wave; t j(init) =25c; t p = 20 ms; see figure ...6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g+ -50a/s i t =6a; i g = 0.2 a; di g /dt = 0.2 a/s; t2+ g... |
| Description |
4Q Triac
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| File Size |
131.64K /
15 Page |
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it Online |
Download Datasheet |
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Price and Availability
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