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  70ns 2m x 16 4m x 8bit cmos ma Datasheet PDF File

For 70ns 2m x 16 4m x 8bit cmos ma Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002L-100 A29002L-120 A29002L-150 A29002L-90 A29002V-90 A29002L-55 A29002-

AMIC Technology
Part No. A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002L-100 A29002L-120 A29002L-150 A29002L-90 A29002V-90 A29002L-55 A29002-150 A29002-120
Description 110ns 20ma 256K x 8bit cmos 5.0V-only
70ns 20ma 256K x 8bit cmos 5.0V-only
100ns 20ma 256K x 8bit cmos 5.0V-only
120ns 20ma 256K x 8bit cmos 5.0V-only
150ns 20ma 256K x 8bit cmos 5.0V-only
90ns 20ma 256K x 8bit cmos 5.0V-only
55ns 20ma 256K x 8bit cmos 5.0V-only

File Size 424.85K  /  31 Page

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    AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V A23L1616M- A23L1616V-100 A23L1616R-70 A23L1616R-100 A23L1616M-70 A23L1616M-100 A23L16162V-70 A23L16162V-100 A23L16161V-100 A23L16161V-70 A23L1616V-70 A23L16161SERIES A23L16162SERIES A23L1616SERIES A23L16162R-100 A23L16162R-70
Description 70ns 2m x 16/4m x 8bit cmos maSK ROM
100ns 2m x 16/4m x 8bit cmos maSK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2m x 16 / 4m x 8 BIT cmos maSK ROM 200万16 / 4米8位cmos掩膜ROM

File Size 123.04K  /  11 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2000BSL-5 KM48C2000BSL-7 KM48C2000BSL-6 KM48C2100BSL-5 KM48C2100BSL-6 KM48C2100BSL-7 KM48V2000BSL-5 KM48C2000BKL-5 KM48C2000BKL-6 KM48C2000BKL-7 KM48C2100BKL-5 KM48C2100BKL-6 KM48C2100BKL-7 KM48V2000BKL-5 KM48V2000BKL-6 KM48V2100BKL-5 KM48V2100BKL-6 KM48V2100BKL-7
Description 2m x 8bit cmos dynamic RAM with fast page mode, 3.3V, 70ns
2m x 8bit cmos dynamic RAM with fast page mode, 5V, 50ns
2m x 8bit cmos dynamic RAM with fast page mode, 5V, 70ns
2m x 8bit cmos dynamic RAM with fast page mode, 5V, 60ns
2m x 8bit cmos dynamic RAM with fast page mode, 3.3V, 50ns
2m x 8bit cmos dynamic RAM with fast page mode, 3.3V, 60ns

File Size 79.12K  /  8 Page

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    HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62

Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIx[Hynix Semiconductor]
http://
Part No. HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62256ALP-I HY62256ALR1 HY62256ALR2-I HY62256ALT1 HY62256ALT1-I HY62256AP HY62256AP-I HY62256AR1 HY62256AR2-I HY62256AT1 HY62256AT1-I HY62256AJ-55 HY62256AJ-85 HY62256AJ-I-70 HY62256AJ-I-55 HY62256AJ-I-85 HY62256ALJ-85 HY62256ALJ-I-70 HY62256ALLJ-85 HY62256ALLJ-55 HY62256ALLJ-70 HY62256AJ-70 HY62256ALJ-I-85 HY62256ALLP-55
Description 32Kx8bit cmos SRAM, standby current=25uA, 70ns
32Kx8bit cmos SRAM, standby current=25uA, 55ns
32Kx8bit cmos SRAM, standby current=25uA, 85ns
32Kx8bit cmos SRAM, standby current=100uA, 70ns
32Kx8bit cmos SRAM, standby current=100uA, 85ns
32Kx8bit cmos SRAM, standby current=1ma, 70ns
32Kx8bit cmos SRAM, standby current=1ma, 85ns
32Kx8bit cmos SRAM, standby current=1ma, 55ns
32Kx8bit cmos SRAM 32Kx8bit cmos SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit cmos SRAM
JT 22C 22#22D SKT RECP
   32Kx8bit cmos SRAM

File Size 819.02K  /  14 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M x 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit cmos Dynamic RAM with Extended Data Out 8米8位的cmos动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit cmos Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL-6 KM48V8104BKL-45 KM48V8104BKL-6
Description 8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns
8M x 8bit cmos dynamic RAM with extended data out, 50ns

File Size 385.67K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL-6 KM48V8104CKL-5 KM48V8104CKL-45 KM48V8004CKL-45 KM48V8004CK-45
Description 8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns

File Size 387.62K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
Description 8M x 8bit cmos dynamic RAM with extended data out, 45ns
8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description 8M x 8bit cmos dynamic RAM with extended data out, 50ns
8M x 8bit cmos dynamic RAM with extended data out, 60ns
8M x 8bit cmos dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
Description 8M x 8bit cmos dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit cmos dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit cmos dynamic RAM with fast page mode, 5V, 50ns

File Size 366.42K  /  20 Page

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For 70ns 2m x 16 4m x 8bit cmos ma Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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