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    1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G

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ONSEMI[ON Semiconductor]
Part No. 1.5SMC68AT3 1.5SMC24AT3 1.5SMC51AT3 1.5SMC30AT3 1.5SMC13AT 1.5SMC56AT3 1.5SMC33AT3 1.5SMC12AT3 1.5SMC10AT3 1.5SMC15AT3G 1.5SMC7.5AT3 1.5SMC8.2AT3 1.5SMCXXXAT3 15SMC68AT3 1.5SMCXXXAT3G 1.5SMC11AT3 1.5SMC13AT3 1.5SMC15AT3 1.5SMC16AT3 1.5SMC18AT3 1.5SMC20AT3 1.5SMC22AT3 1.5SMC27AT3 1.5SMC36AT3 1.5SMC39AT3 1.5SMC43AT3 1.5SMC47AT3 1.5SMC6.8AT3 1.5SMC62AT3G 1.5SMC82AT3 1.5SMC9.1AT3 1.5SMC91AT3 1.5SMC62AT3 1.5SMC16A 1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC43A 1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC68A 1.5SMC82A 1.5SMC15A 1.5SMC62A 1.5SMC75A 1.5SMC75AT3
OCR Text ...ent Forward Surge Current (Note 4) @ TA = 25C Operating and Storage Temperature Range Symbol PPK PD RqJL PD RqJA IFSM TJ, Tstg Value 1500 4....turn-on time (time required for the device to go from zero current to full current) and lead inducta...
Description Zener Diode
Transistor Suppressor
High Power
1500 Watt Peak Power Zener Transient Voltage Suppressors
ELR 2/1-230Z
1500 Watt Peak Power Zener Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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    22SC5405 2SC5405

PANASONIC[Panasonic Semiconductor]
PanasonicSemiconductor
Panasonic Corporation
Part No. 22SC5405 2SC5405
OCR Text ...tures q q 9.90.3 3.00.5 4.60.2 2.90.2 q High-speed switching High forward current transfer ratio hFE which has satisfactory li...Turn-on time Storage time Fall time (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE * Conditions VCB...
Description    Silicon NPN triple diffusion planar type
SiliconNPNtriplediffusionplanartype

File Size 35.55K  /  2 Page

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    2SA1010 2SA1010-AZ 2SA10102

NEC[NEC]
Part No. 2SA1010 2SA1010-AZ 2SA10102
OCR Text ... Collector current waveform 4 Data Sheet D16118EJ2V0DS 2SA1010 [MEMO] Data Sheet D16118EJ2V0DS 5 2SA1010 * The information in this document is current as of July, 2001. The information is subject to change without not...
Description Silicon transistor
SILICON POWER TRANSISTOR
7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ... -10 -100 -5 A IB = 0 0 -2 -4 -6 -8 -10 Collector to Emitter Voltage VCE (V) 3 2SA1193(K) Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...25 rat C ion ) (1 S hot ) 4 0 50 100 Case Temperature TC (C) 150 Ta = 25C -0.01 -0.1 -0.3 -1.0 -3 -10 -30 -100 Collector to emitter Voltage VCE (V) 2 2SA1194(K) Typical Output Characteristics P c= .0 -0.8 8W -1 .6 T...
Description Silicon PNP Epitaxial

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    2SA2004

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2004
OCR Text 4.60.2 2.90.2 13.70.2 4.20.2 Solder Dip * High forward current transfer ratio hFE * Satisfactory linearity of forward current transfer...Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = -60 V, IE = 0 VCE...
Description    Silicon PNP epitaxial planer type

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...it:mm 2038A [2SA2011/2SC5564] 4.5 1.6 1.5 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitt...Turn-ON Time Storage Time Fall Time VCE(sat) VBE(sat) IC=(-)3A, IB=(-)60mA IC=(-)1.5A, IB=(-)30mA (-...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...it:mm 2038A [2SA2012/2SC5565] 4.5 1.6 1.5 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-emitt...Turn-ON Time Storage Time Fall Time VBE(sat) IC=(-)1.5A, IB=(-)30mA (-30) 40 (-)30 (-)5 (50)30 (270)...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...it:mm 2038A [2SA2013/2SC5566] 4.5 1.6 1.5 Features * Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-...Turn-ON Time Storage Time Fall Time VBE(sat) IC=(-)2A, IB=(-)100mA (-50) 80 (-)50 (-)6 (30)35 (230) ...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ...nit:mm 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 Features * Adoption of FBET and MBIT processes. * High current capacitance. * Low collector-...Turn-ON Time Storage Time Fall Time VBE(sat) IC=(-)2A, IB=(-)40mA (-50) 80 (-)50 (-)6 (40)30 (225) 4...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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