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Motorola
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| Part No. |
MRF5P21180
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| OCR Text |
...CHANNEL RF POWER MOSFET
CASE 375D-04, STYLE 1 NI-1230
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Di...05
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload ... |
| Description |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system
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| File Size |
410.25K /
8 Page |
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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF9180 MRF9180S
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| OCR Text |
...HANNEL RF POWER MOSFETs
CASE 375D-04, STYLE 1 NI-1230 MRF9180
CASE 375E-03, STYLE 1 NI-1230S MRF9180S
MAXIMUM RATINGS
Rating Drain...05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 18.5 nH Mini Spring Inductors, Coilcraft 12.5 nH ... |
| Description |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
337.46K /
12 Page |
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it Online |
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MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF19120S MRF19120
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| OCR Text |
...HANNEL RF POWER MOSFETs
CASE 375D-04, STYLE 1 NI-1230 MRF19120
CASE 375E-03, STYLE 1 NI-1230S MRF19120S
MAXIMUM RATINGS
Rating Dra...05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH, Minispring Inductor, Coilcraft 8.0 nH, Mi... |
| Description |
RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
343.87K /
12 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5P21180R6 MRF5P21180
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| OCR Text |
...CHANNEL RF POWER MOSFET
CASE 375D-04, STYLE 1 NI-1230
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Di...05
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload ... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFET
RF Power Field Effect Transistor
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| File Size |
406.67K /
9 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6P23190HR6
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| OCR Text |
...CHANNEL RF POWER MOSFET
CASE 375D - 05, STYLE 1 NI - 1230
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temper... |
| Description |
2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET
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| File Size |
471.86K /
12 Page |
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it Online |
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