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NTE[NTE Electronics]
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| Part No. |
NTE2312
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| OCR Text |
...- - - - - - - - - - - 60 30 1 2 3 3 1.2 1.6 1.5 V V V V V V V IEBO VEB = 9V, Ic = 0 400 - - - - - - - - 1 5 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit
Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
22.95K /
3 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE379
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| OCR Text |
... 5V, TC = +100C - - 0.92 0.12 2.3 0.7 s s td tr ts tf VCC = 125V, IC = 8A, IB1 = IB2 = 1.6A, tp = 25s, Duty Cycle 1% - - - - 0.06 0.45 1.3 0.2 0.1 1.0 3.0 0.7 s s s s fT Cob IC = 500mA, VCE = 10V, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz 4 ... |
| Description |
Silicon NPN Transistor Power Amp, High Voltage, Switch
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| File Size |
21.64K /
3 Page |
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Supertex, Inc.
SUTEX[Supertex, Inc]
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| Part No. |
GN2470K4 GN2470
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| OCR Text |
...
The Supertex GN2470 is a 700V, 3.5 amp insulated gate bipolar transistor (IGBT) that combines the positive aspects of both BJTs and MOSFETs. The GN2470 IGBT has lower on-state voltage drop with high blocking voltage capabilities and featur... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
220.66K /
8 Page |
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Micross Components
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| Part No. |
ICE8N70FP
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| OCR Text |
...esistance, junction to case - - 3.5 c/w r thja thermal resistance, junction to ambient - - 80 leaded t sold soldering temperature, wave sol...700v, v gs = 0v, t j = 25c - - 100 v ds = 700v, v gs = 0v, t j = 150c i gss gate source leakage... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
567.88K /
4 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP3NC70ZFP STP3NC70Z
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| OCR Text |
...GE MINIMIZED TO-220 TO-220FP
3 1 2
DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and so... |
| Description |
N-CHANNEL 700V 4.1 OHM 2.5A TO-220/TO-220FP ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH?III MOSFET
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| File Size |
322.99K /
10 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TS13002ACTB0 TS13002A TS13002ACTA3
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| OCR Text |
...gnment: 1. Emitter 2. Collector 3. Base
Features
High voltage.
Ordering Information
Part No. TS13002ACT B0 TS13002ACT A3 Packing Bu...700V 400V 9 0.3 0.5 0.6 +150 - 55 to +150
Unit
V V V A W
o o
C C
Electrical Characteristi... |
| Description |
High Voltage NPN Transistor
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| File Size |
143.99K /
2 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
Taiwan Semiconductor Co., Ltd.
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| Part No. |
TS13003BCTB0 TS13003B TS13003BCTA3
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| OCR Text |
3. Base
BVCEO = 400V BVCBO = 700V Ic = 1.5A VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
High voltage. High speed switching
Ordering Information
Part No. TS13003BCT B0 TS13003BCT A3 Packing Bulk Pack Ammo Pack Package TO-92... |
| Description |
High Voltage NPN Transistor
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| File Size |
48.07K /
3 Page |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TS13005CZ TS13005 TS13005CI TS13005CP
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| OCR Text |
3. Emitter
BVCEO = 400V BVCBO = 700V Ic = 4A VCE (SAT), = 1V @ Ic / Ib = 4A / 1A
Features
High voltage. High speed switching
Ordering Information
Part No. TS13005CZ TS13005CI TS13005CP T&R Packing Tube Package TO-220 ITO-220 TO-2... |
| Description |
High Voltage NPN Transistor
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| File Size |
65.85K /
3 Page |
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it Online |
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| Part No. |
LA070URD30TTI0500 LA070URD30TTI0550
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| OCR Text |
...tage melting i 2 t (a 2 s x 10 3 ) total i 2 t @ rated voltage (a 2 s x 10 3 ) **watts loss @ rated current (w) long blade catalog no...700v f uses dimensions for reference only. catalog number dimensions in inches (mm in parentheses) a... |
| Description |
VERY FAST BLOW ELECTRIC FUSE, 500A, 700VAC, 200000A (IR), INLINE/HOLDER
VERY FAST BLOW ELECTRIC FUSE, 550A, 700VAC, 200000A (IR), INLINE/HOLDER
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| File Size |
163.95K /
5 Page |
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it Online |
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Price and Availability
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