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MICROSEMI[Microsemi Corporation]
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| Part No. |
2n6052 2N6051 JANTXV2N6051 JANTXV2n6052
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| OCR Text |
2n6052 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1)
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg... |
| Description |
PNP Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
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| File Size |
53.26K /
2 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
2N6059 2n6052 2N6058 2n6052-D
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| OCR Text |
...ency switching applications.
2n6052* 2N6058 2N6059*
*ON Semiconductor Preferred Device
NPN
* High DC Current Gain -- * *
hFE = 3500 (Typ) @ IC = 5.0 Adc Collector-Emitter Sustaining Voltage -- @ 100 mA VCEO(sus) = 80 Vdc (Min) --... |
| Description |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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| File Size |
126.26K /
8 Page |
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it Online |
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Comset Semiconductors
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| Part No. |
2N6050
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| OCR Text |
2n6052 17/10/2012 comset semiconductors 1 | 3 p p o o w w e e r r c c o o m m p p l l e e m m e e n n t t a a r r y y s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s... |
| Description |
(2N6050 - 2n6052) POWER COMPLEMENTARY SILICON TRANSISTORS
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| File Size |
127.23K /
3 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
JANTXV2n6052
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| OCR Text |
...np, silicon, power type 2n6051, 2n6052 jan, jantx, and jantxv this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requir... |
| Description |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 12A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁| 12A条一（c）|
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| File Size |
80.67K /
15 Page |
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it Online |
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