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  256kx16 Datasheet PDF File

For 256kx16 Found Datasheets File :: 199    Search Time::4.094ms    
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    K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X401

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text 256kx16 bit Low Power full CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type. Finalized - Changed ICC from 10mA to 5mA - Ch...
Description 256kx16 bit Low Power full CMOS Static RAM 256kx16位充分的CMOS低功耗静态存储器

File Size 129.39K  /  9 Page

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    A82DL1624T

AMIC Technology
Part No. A82DL1624T
OCR Text ...operation flash memory and 4m (256kx16 bit) static ram preliminary preliminary (august, 2005, version 0.0) amic technology, corp. document title stacked multi-chip package (mcp) flash memo ry and sram, a82dl16x4t(u) 1...
Description (A82DL16x4T) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

File Size 987.32K  /  57 Page

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    FM22LD16-55-BG FM22LD16-55-BGTR

Cypress Semiconductor
Part No. FM22LD16-55-BG FM22LD16-55-BGTR
OCR Text ...volatile ram ? organized as 256kx16 ? configurable as 512kx8 using /ub, /lb ? 10 14 read/write cycles ? nodelay? writes ? page mode operation to 4 0mhz ? advanced high - reliability ferroelectric process sra m ...
Description 4Mbit F-RAM Memory

File Size 370.06K  /  14 Page

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    FM22L16-55-TG FM22L16-55-TGTR

Cypress Semiconductor
Part No. FM22L16-55-TG FM22L16-55-TGTR
OCR Text ...nvolatile ram ? organized as 256kx16 ? configurable as 512kx8 using /ub, /lb ? 10 14 read/write cycles ? nodelay? writes ? page mode operation to 40mhz ? advanced high-reliability ferroelectric process sram compatible ...
Description 4Mbit Asynchronous F-RAM Memory

File Size 396.52K  /  14 Page

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    NEC, Corp.
Part No. 128MD-40-800
OCR Text ... ? direct rdram ? 128/144-mbit (256kx16/18x32s) page 2 preliminary information document dl0059 version 1.1 direct rdram? 128/144-mbit (256kx16/18x32s) pinouts and definitions center-bonded devices these tables shows the pin assignment...
Description 8M X 16 DIRECT RAMBUS DRAM, 40 ns, PBGA62 CENTER BONDED, BGA-62

File Size 2,646.94K  /  66 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM616U4000BZ
OCR Text 256kx16 low voltage & low power sram datasheets for 48-csp revision history the attached datasheets are provided by samsung electronics. samsung electronics co., ltd. reserve the right to change the speci fications and products. samsung ...
Description 256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)

File Size 150.25K  /  9 Page

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    Emerging Memory & Logic Solutions
Part No. EM640FV16FW
OCR Text 256kx16 sram 1 document title 256k x16 bit low power and low voltage full cmos static ram revision history revision no. history draft date remark 0.0 initial draft august 13 , 2003 emerging memory & logic solutions inc. 4f korea ...
Description 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM

File Size 118.43K  /  11 Page

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    KM6164000B KM6164000BLI-L KM6164000BL-L KM6164000BLR-5L KM6164000BLR-7L KM6164000BLRI-10L KM6164000BLRI-7L KM6164000BLT-

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM6164000B KM6164000BLI-L KM6164000BL-L KM6164000BLR-5L KM6164000BLR-7L KM6164000BLRI-10L KM6164000BLRI-7L KM6164000BLT-5L KM6164000BLT-7L KM6164000BLTI-10L KM6164000BLTI-7L
OCR Text 256kx16 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft Revise - Die name change ; A to B Finalize Revise - Operating current update and release. ICC(Read/Write) = 30/60 15/75...
Description 256kx16 bit Low Power CMOS Static RAM

File Size 150.46K  /  9 Page

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