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Rohm Co., Ltd.
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| Part No. |
RGT30NS65D
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| OCR Text |
15a field stop trench igbt *1 pulse width limited by t jmax. operating junction temperature t j - 40 to +175 c storage temperature t stg - 5...650v lpds (to-263s) i c(100c) 15a v ce(sat) (typ.) 1.65v p d 133w l features l inner circuit 1) low... |
| Description |
650v 15a Field Stop Trench IGBT
650v 15a Field Stop Trench IGBT
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| File Size |
704.08K /
12 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDA15N65
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| OCR Text |
...haracteristics VDD = 325V, ID = 15a RG = 21.7
(Note 4, 5)
------(Note 4, 5)
VDS = 520V, ID = 15a VGS = 10V
--
Drain-Source Diod...650v N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1... |
| Description |
N-Channel UniFETTM MOSFET 650v, 16A, 440m
650v N-Channel MOSFET
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| File Size |
782.97K /
8 Page |
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it Online |
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Icemos Technology
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| Part No. |
ICE15N65
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| OCR Text |
...t summary i d t a =25 o c 15a max v ( br)dss i d =250ua 650v min r ds(on) v gs =10v 0.25 typ q g v ds =480v 59nc typ icemos and its sister company 3 d semi own the fundamental patents ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
556.32K /
9 Page |
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it Online |
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