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Part No. |
FP35R12KS4CG
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OCR Text |
... - di f /dt = 1400a/s peak reverse recovery current v ge = -10v, t vj = 25c, v r = 600 v i rm - 40 - a v ge = -10v, t vj = 125c, v r = 600 v - 45 - a sperrverz?gerungsladung i f =i nenn , ... |
Description |
40 A, 1200 V, N-CHANNEL IGBT
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File Size |
213.48K /
12 Page |
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Infineon
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Part No. |
SIDC14D60E6
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OCR Text |
...e recovery time t rr2 di/dt=1400a/ m s v r =300v t j =125c ns i rrm1 t j =25c 50 peak recovery current i rrm2 i f =30a di/dt=1400a/ m s v r = 300v t j =125c 53.3 a q rr1 t j =25 c 2... |
Description |
Diodes - HV Chips - SIDC14D60E6, 600V, 30A
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File Size |
65.13K /
4 Page |
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Westcode Semiconductors
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Part No. |
T1400TA18A
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OCR Text |
...haracteristics - 4.1 4.3 i c = 1400a, v ge = 15v, t j = 25c v v ce(sat) collector ? emitter saturation voltage - 5.3 5.5 i c = 1400a, v ge = 15v v v o r s threshold voltage slope resistance - - - - 2 2.5 current range 400a ? 1400 a v m... |
Description |
Insulared Gate Bi-polar Transistor
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File Size |
158.33K /
14 Page |
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it Online |
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