| |
|
 |
NXP Semiconductors N.V.
|
| Part No. |
BLF4G10LS-120
|
| OCR Text |
...s transistor 1.3 applications n rf power ampli?ers for gsm, gsm edge and cdma base stations and multicarrier applications in the 868 mhz to 961 mhz frequency range. 2. pinning information [1] connected to ?ange 3. ordering information 4. li... |
| Description |
UHF power LDMOS transistor
|
| File Size |
91.25K /
13 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
BLF4G10S-120
|
| OCR Text |
...et table 1: typical performance rf performance at t h =25 c in a common base class-ab test circuit. mode of operation f (mhz) v ds (v) p l ...transistor 1.3 applications n rf power ampli?ers for gsm, gsm edge and cdma base stations and multic... |
| Description |
UHF power LDMOS transistor
|
| File Size |
103.30K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
BLF7G27L-90P BLF7G27LS-90P
|
| OCR Text |
...nces (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2500 mhz to 2700 mhz frequency range blf7g27l-90p; blf7g27ls-90p power ldmos transistor rev. 2 ? 10 november 2011 product... |
| Description |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
| File Size |
951.03K /
14 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP
|
| Part No. |
AN11062
|
| OCR Text |
...n b2 (25 ? ). c34 and c35 are rf decoupling capacitors for the balun. the transistor gate supply is connected via an rc network consisting of resistors r3 to r6, along with c36 and c37. this rc network performs a damping function that ... |
| Description |
Broadband DVB-T UHF power amplifier
|
| File Size |
445.29K /
20 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
