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  pulsed cw Datasheet PDF File

For pulsed cw Found Datasheets File :: 1149    Search Time::1.438ms    
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    CHA3092 CHA3092-99F_00 CHA3092-99F/00

UMS[United Monolithic Semiconductors]
Part No. CHA3092 CHA3092-99F_00 CHA3092-99F/00
OCR Text ...tness (1) Reverse isolation (1) pulsed output power at 1dB compression (1) Output power at 3dB gain compression 3 order intercept point Powe...cw mode operation, the typical output power may be around 2dB less. (2) Voltage across an external 1...
Description Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:23-6
20-33GHz Medium Power Amplifier

File Size 110.97K  /  7 Page

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    CHA3093C CHA3093C99F_00 CHA3093C99F/00

UMS[United Monolithic Semiconductors]
Part No. CHA3093C CHA3093C99F_00 CHA3093C99F/00
OCR Text ... 1GHz BW) Reverse isolation (1) pulsed output power at 1dB gain compression (1) pulsed output power at 3dB gain compression (1) rd Min ...cw mode operation, the typical output power may be around 2dB less. (2) Voltage across an external 1...
Description 20-40GHz Medium Power Amplifier

File Size 256.03K  /  10 Page

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    DEIC420

Directed Energy
IXYS[IXYS Corporation]
Part No. DEIC420
OCR Text ...ors Acoustic Transducer Drivers pulsed Laser Diode Drivers DC to DC Converters Pulse Transformer Driver DEI U.S. Patent #4,891,686 Fig...cw Repetition Frequency 5 DEIC420 Figure 15 13.56MHz cw Repetition Frequency Figure 16 50MHz ...
Description 20 Ampere Low-Side Ultrafast RF MOSFET Driver

File Size 154.93K  /  7 Page

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    FQB6N60 FQI6N60 FQB6N60TM FQB6N60TMNL

FAIRCHILD[Fairchild Semiconductor]
Part No. FQB6N60 FQI6N60 FQB6N60TM FQB6N60TMNL
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQB6N60 / FQI6N60 600 6.2 3.9 24.8 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A ...cw cw cw * When mounted on the minimum pad size recommended (PCB Mount) (c)2000 Fairchild Semi...
Description 600V N-Channel QFET
600V N-Channel MOSFET

File Size 545.31K  /  9 Page

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    FQPF6N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF6N60
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQPF6N60 600 3.6 2.3 14.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ ...cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF6N60 Electric...
Description 600V N-Channel MOSFET

File Size 542.49K  /  8 Page

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    Motorola
Part No. MRF5P21180
OCR Text ... 34 VDD = 28 Vdc, IDQ = 1600 mA pulsed cw, 5 sec (on), 1 msec (off) Center Frequency = 2140 MHz 36 38 40 42 Pin, INPUT POWER (dBm) Ideal P3dB = 53.72 dBm (236 W) P1dB = 52.99 dBm (199 W) Actual Figure 6. Intermodulation Distortion Produc...
Description 2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET
From old datasheet system

File Size 410.25K  /  8 Page

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    ADN2850ARU25 ADN2850ARU25-REEL7 ADN2850ACP25-RL7 ADN2850ACP250 ADN2850ACP25 ADN2850ACP250-RL7 ADN2850

Analog Devices, Inc.
Part No. ADN2850ARU25 ADN2850ARU25-REEL7 ADN2850ACP25-RL7 ADN2850ACP250 ADN2850ACP25 ADN2850ACP250-RL7 ADN2850
OCR Text ... Not shown in timing diagram PR pulsed low to refreshed wiper positions 10 50 70 100,000 100 RELIABILITY13 3. 4. 5. 6. 7. 8. 9. 10. 11...cw W 0 80E-12 CB B 0 8E-12 * .ENDS RDAC (5) Figure 15. Reduce Resistance by half with linear a...
Description TERM,RING NON-INSUL. DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, QCC16
Nonvolatile Memory, Dual 1024 Position Programmable Resistors
Nonvolatile Memory/ Dual 1024 Position Programmable Resistors

File Size 256.78K  /  18 Page

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    MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF5S19150R3 MRF5S19150 MRF5S19150SR3
OCR Text ... 39 VDD = 28 Vdc, IDQ = 1400 mA pulsed cw, 8 sec (on), 1 msec (off) Center Frequency = 1960 MHz 40 41 42 43 44 45 P3dB = 53.71 dBm (234.96 W) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing ...
Description MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors

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    MRF6P18190HR6

Freescale Semiconductor, Inc
Part No. MRF6P18190HR6
OCR Text ... VDD = 28 Vdc, IDQ = 2000 mA pulsed cw, 8 sec(on), 1 msec(off) Center Frequency = 1842.5 MHz 32 33 34 35 36 37 38 39 40 41 42 43 44 -60 0.01 0.1 1 10 100 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Int...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 457.52K  /  12 Page

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    FQPF4N60

Fairchild Semiconductor
Part No. FQPF4N60
OCR Text ...ous (TC = 100C) Drain Current - pulsed (Note 1) FQFP4N60 600 2.6 1.64 10.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ...cw cw (c)2000 Fairchild Semiconductor International Rev. A, April 2000 FQPF4N60 Electric...
Description 600V N-Channel MOSFET

File Size 548.32K  /  8 Page

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For pulsed cw Found Datasheets File :: 1149    Search Time::1.438ms    
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