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Motorola
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Part No. |
MRF5P21180
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OCR Text |
... 34 VDD = 28 Vdc, IDQ = 1600 mA pulsed cw, 5 sec (on), 1 msec (off) Center Frequency = 2140 MHz 36 38 40 42 Pin, INPUT POWER (dBm) Ideal P3dB = 53.72 dBm (236 W) P1dB = 52.99 dBm (199 W) Actual
Figure 6. Intermodulation Distortion Produc... |
Description |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET From old datasheet system
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File Size |
410.25K /
8 Page |
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it Online |
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MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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Part No. |
MRF5S19150R3 MRF5S19150 MRF5S19150SR3
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OCR Text |
... 39 VDD = 28 Vdc, IDQ = 1400 mA pulsed cw, 8 sec (on), 1 msec (off) Center Frequency = 1960 MHz 40 41 42 43 44 45 P3dB = 53.71 dBm (234.96 W)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
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Description |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs RF Power Field Effect Transistors
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File Size |
613.99K /
12 Page |
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it Online |
Download Datasheet
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Price and Availability
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