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  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 271    Search Time::1.313ms    
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    FMA3018QFN FMA3018QFN-EB

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Filtronic Compound Semiconductors
Part No. FMA3018QFN FMA3018QFN-EB
OCR Text ... The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small foot...
Description MEDIUM LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE

File Size 110.17K  /  4 Page

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    TC1301

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ETC
TRANSCOM
Part No. TC1301
OCR Text ...ESCRIPTION The TC1301 is a GaAs pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low...
Description Low Noise and Medium Power GaAs FETs

File Size 204.99K  /  6 Page

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    NE3210S01 NE3210S01-T1 NE3210S01-T1B

California Eastern Labs
Part No. NE3210S01 NE3210S01-T1 NE3210S01-T1B
OCR Text ...SCRIPTION NEC's NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate re...
Description SUPER LOW NOISE HJ FET

File Size 327.26K  /  7 Page

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    NE4210S01 NE4210S01-T1 NE4210S01-T1B

California Eastern Labs
Part No. NE4210S01 NE4210S01-T1 NE4210S01-T1B
OCR Text ...SCRIPTION NEC'S NE4210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate re...
Description SUPER LOW NOISE HJ FET

File Size 214.82K  /  7 Page

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    CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00D0 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0

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MIMIX[Mimix Broadband]
Part No. CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00D0 CFS0303-SB PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0
OCR Text ... Features AIGaAs/InGaAs/AIGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA 0.3 dB Noise Figure at 2 GHz 17 dBm P1dB at 2 GHz 33 dBm OIP3 at 2 GHz 600 m Gate Wid...
Description 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package

File Size 321.06K  /  17 Page

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    Agilent (Hewlett-Packard)
ETC[ETC]
Part No. ATF-521P8-TR2 ATF-521P8-TR1 ATF-521P8-BLK
OCR Text pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High linearity and P1dB Description Agilent Technologies's ATF-521P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lea...
Description ATF-521P8 · Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in LPCC
High Linearity Enhancement Mode pseudomorphic HEMT in 2x2 mm2 LPCC Package

File Size 244.22K  /  24 Page

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    HP[Agilent(Hewlett-Packard)]
Part No. ATF-54143-TR2 ATF-54143-BLK ATF-54143-TR1
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features * High linearity performance * Enhancement Mode Technology [1] * Low noise figure * Excellent uniformity in product specifications Description Agilent Technologies'...
Description Low Noise Enhancement Mode pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 146.82K  /  16 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-541M4-TR2 ATF-541M4 ATF-541M4-BLK ATF-541M4-TR1 DEMO-ATF-5X1M4A
OCR Text pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features * High linearity performance * Single Supply Enhancement Mode Technology[1] * Very low noise figure * Excellent uniformity in product specifications * 800 micron gate ...
Description ATF-541M4 · Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
DEMO-ATF-5X1M4A · Demonstration circuit board for ATF-541M4 and ATF-551M4 (2 GHz)
Low Noise Enhancement Mode pseudomorphic HEMT in a Miniature Leadless Package

File Size 160.23K  /  16 Page

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    INFINEON[Infineon Technologies AG]
Part No. CFH120-10 CFH120 CFH120-06 CFH120-08
OCR Text pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 _________________...
Description Preliminary Datasheet

File Size 242.24K  /  20 Page

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For pseudomorphic Found Datasheets File :: 271    Search Time::1.313ms    
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