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    Micron Semiconductor
Part No. MT45W2MW16B MT45W2MW16BFB
Description (MT45W2MW16BFB / MT45W4MW16BFB) burst Cellularram Memory
(MT45W2MW16B / MT45W4MW16B) burst Cellularram Memory

File Size 767.69K  /  53 Page

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    Vicor, Corp.
Part No. WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WED2ZL361MV35BC
Description 1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))

File Size 213.99K  /  12 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1418AV18-267BZC
Description 36-Mbit DDR-II SRAM 2-Word burst Architecture; Architecture: DDR-II CIO, 2 Word burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V

File Size 917.70K  /  27 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
Description 256M Bit (16M x16) Synchronous burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous burst UtRAM

File Size 1,565.84K  /  98 Page

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    Alliance Semiconductor, Corp.
Part No. AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PFD18A AS7C3256PFD18A-3.5TQC AS7C3256PFD18A-3.8TQC AS7C3256PFD18A-5TQC AS7C3256PFD16A-5TQC AS7C3256PFD16A AS7C3256PFD16A-3.5TQC AS7C3256PFD16A-3.8TQC
Description 3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz

File Size 163.16K  /  11 Page

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    GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I GS82032T-6I GS82032Q-117 GS82032Q-133 GS82032Q-133I GS82032Q-138 GS82

GSI Technology
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I GS82032T-6I GS82032Q-117 GS82032Q-133 GS82032Q-133I GS82032Q-138 GS82032Q-138I GS82032Q-4I GS82032T-117 GS82032T-100 GS82032T-4I GS82032T-5I GS82032Q-100 GS82032Q-6I GS82032Q-66 GS82032T-150 GS82032T-133 GS82032T-133I GS82032T-150I GS82032Q-150I GS82032T-138 GS82032T-138I
Description 66MHz 18ns 64K x 32 2M synchronous burst SRAM
PROGRAMMER UNIVERSAL 40-PIN
64K x 32 / 2M Synchronous burst SRAM
64K x 32 2M Synchronous burst SRAM 64K的32 200万同步突发静态存储器
PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器
.56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器
64K X 32 CACHE SRAM, 11 ns, PQFP100

File Size 764.38K  /  23 Page

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    GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I GS880F18T-14 GS880F18T-12I GS880F18T-11.5I GS880F18T-11I

GSI Technology, Inc.
Molex, Inc.
Part No. GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I GS880F18T-14 GS880F18T-12I GS880F18T-11.5I GS880F18T-11I
Description 8Mb12K x 18Bit) Synchronous burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
512K x 18, 256K x 36 8Mb Sync burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100

File Size 314.19K  /  22 Page

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    GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-150 GS84036T-166 GS84032B-150I GS84032B-100I GS84036T-166I GS84036T-100

GSI Technology
Part No. GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-150 GS84036T-166 GS84032B-150I GS84032B-100I GS84036T-166I GS84036T-100 GS84036T-150I GS84036T-100I GS84032B-180 GS84032B-180I GS84032T-180 GS84032T-100 GS84036B-100 GS84036B-166 GS84036B-150 GS84036B-180 GS84036T-180 GS84018B-180 GS84018B-100I GS84018B-150I GS84018B-166I GS84018T-166 GS84018T-150 GS84018T-100 GS84018T-100I GS84018T-180 GS84032T-150 GS84018T-150I GS84032T-166I GS84036B-166I GS84036B-100I GS84032T-150I GS84018 GS84032B-180T GSITECHNOLOGY-GS84032B-180I GS84032T-100I
Description 128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous burst SRAM(4M位(256K x 18位)同步静态RAM(带2位脉冲地址计数器))
256K x 18, 128K x 32, 128K x 36 4Mb Sync burst SRAMs

File Size 632.72K  /  31 Page

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    K7A203600 K7A203600A K7A203600B-QCI14

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K7A203600 K7A203600A K7A203600B-QCI14
Description 64K x 36-Bit Synchronous Pipelined burst SRAM Rev. 2.0 (Dec. 1999)
64Kx36 & 64Kx32-Bit Synchronous Pipelined burst SRAM
64Kx36-Bit Synchronous Pipelined burst SRAM

File Size 411.94K  /  15 Page

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    AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28BV64B-20JC AT28BV64B AT28BV64BNBSP AT28BV64B-20PI AT28BV64B-25TI AT28BV

ATMEL[ATMEL Corporation]
Atmel, Corp.
Part No. AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28BV64B-20JC AT28BV64B AT28BV64BNBSP AT28BV64B-20PI AT28BV64B-25TI AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28BV64B-20TI AT28BV64B-25JC AT28BV64B-25JI AT28BV64B-25PC AT28BV64B-25PI AT28BV64B-25SC AT28BV64B-25SI
Description 64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with page Write and Software Data Protection
64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with page Write and Software Data Protection
From old datasheet system
64K EEPROM with 64-Byte page & Software Protection, 2.7-Volt
64K (8K x 8) Battery-Voltage Parallel EEPROM with page Write and Software Data Protection
High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28
64K (8K x 8) Battery-VoltageParallel EEPROM with page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28

File Size 179.59K  /  12 Page

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