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  n-factor Datasheet PDF File

For n-factor Found Datasheets File :: 30417    Search Time::1.235ms    
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    IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF-15

International Rectifier
Part No. IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF-15
OCR Text ...ntegral reverse --- --- 650 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 95A, VGS = 0V --- 71 110 ns TJ = 25C, IF = 95A --- 180 270 n...Factor 0.1 % RD D.U.T. + ID , Drain Current (A) -V DD 120 80 Fig 10a. Switchi...
Description HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology

File Size 270.84K  /  11 Page

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    SIHF9640 SIHF9640-E3 IRF9640 IRF9640PBF

Vishay Siliconix
Part No. SIHF9640 SIHF9640-E3 IRF9640 IRF9640PBF
OCR Text ...1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ...factor 0.1 % VDD Fig. 10a - Switching Time Test Circuit VDS 10 % td(on) tr td(off...
Description Power MOSFET

File Size 1,925.76K  /  8 Page

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    SIHFP360 SIHFP360-E3

Vishay Siliconix
Part No. SIHFP360 SIHFP360-E3
OCR Text ...specifications. G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP360PbF SiHFP360-E3 IRFP360 ...Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Max...
Description Power MOSFET

File Size 960.65K  /  8 Page

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    SIHF9620 SIHF9620-E3 IRF9620 IRF9620PBF

Vishay Siliconix
Part No. SIHF9620 SIHF9620-E3 IRF9620 IRF9620PBF
OCR Text ...0c 10 1.1 W/C W V/ns C lbf * in N*m A UNIT V Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature...factor 0.1 % VDD Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching...
Description Power MOSFET

File Size 1,923.30K  /  7 Page

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    SIHF9610 IRF9610PBF IRF9610 SIHF9610-E3

Vishay Siliconix
Part No. SIHF9610 IRF9610PBF IRF9610 SIHF9610-E3
OCR Text ... 10 1.1 W/C W A V/ns C lbf * in N*m A UNIT V Linear Derating Factor Maximum Power Dissipation Inductive Current, Clamp Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperatur...
Description Power MOSFET

File Size 1,641.06K  /  8 Page

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    LR120

Vishay Siliconix
Part No. LR120
OCR Text ... (nc) 7.1 configuration single n-channel mosfet g d s dpak (to-252) ipak (to-251) g d s s d g d ordering information package dpak (to-252)...factor 0.33 w/c linear derating fa ctor (pcb mount) e 0.020 single pulse avalanche energy b e as 2...
Description Trans MOSFET N-CH 100V 7.7A 3-Pin(2 Tab) DPAK

File Size 1,283.84K  /  11 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --- 2.0 3....Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 T...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --- 2.0 3....Factor 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 T...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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For n-factor Found Datasheets File :: 30417    Search Time::1.235ms    
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