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  n-channel 1200v - 2 8 - 4 4a - Datasheet PDF File

For n-channel 1200v - 2 8 - 4 4a - Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL

FAIRCHILD[Fairchild Semiconductor]
Part No. LSL9R30120G2 ISL9R30120G2 ISL9R30120G2NL
Description 30A, 1200v STEALTH DIODE, TO247 PACKAGE
30A, 1200v Stealth⑩ Diode
ISL9R30120G2
30A, 1200v Stealth?/a> Diode

File Size 114.42K  /  6 Page

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    HGTP1N120BND

Fairchild Semiconductor
Part No. HGTP1N120BND
Description 5.3A, 1200v, NPT Series n-channel IGBT with Anti-Parallel Hyperfast Diode

File Size 101.86K  /  8 Page

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    HGTP1N120CND

Fairchild Semiconductor
Part No. HGTP1N120CND
Description 6.2A, 1200v, NPT Series n-channel IGBT with Anti-Parallel Hyperfast Diode

File Size 105.80K  /  8 Page

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    IRG4PH30KD IRG4PH30

IRF[International Rectifier]
Part No. IRG4PH30KD IRG4PH30
Description 1200v UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

File Size 209.26K  /  10 Page

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    IR2235JPBF IR2135JTRPBF IR2133PBF IR2133JSPBF IR2233JSPBF IR2233SPBF IR2235JSPBF

International Rectifier
Part No. IR2235JPBF IR2135JTRPBF IR2133PBF IR2133JSPBF IR2233JSPBF IR2233SPBF IR2235JSPBF
Description 0.5 A 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC32
3-PHASE BRIDGE DRIVER
Floating channel designed for bootstrap operation Fully operational to 600V or 1200v Tolerant to negative transient voltage dV/dt immune

File Size 429.70K  /  27 Page

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    IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q670

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
Description IGBTs & DuoPacks - 3A 1200v HighSpeed2 DuoPack IGBT D2Pak
1200v HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon&#8482; diode in only one package.
IGBTs & DuoPacks - 3A 1200v HighSpeed2 DuoPack IGBT TO247
IGBTs & DuoPacks - 3A 1200v HighSpeed2 DuoPack IGBT TO220
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system

File Size 428.03K  /  15 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, n-channel IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200v Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200v UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X4003 X4005S8I-2.7A X4003M8-1.8 X4003M8I X4003M8I-2.7 X4003M8I-2.7A X4003

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X4003 X4005S8I-2.7A X4003M8-1.8 X4003M8I X4003M8I-2.7 X4003M8I-2.7A X4003M8I-4.5A X4003S8 X4003S8-1.8 X4003S8-2.7 X4003S8-2.7A X4003S8-4.5A X4003S8I X4003S8I-2.7 X4003S8I-2.7A X4003S8I-4.5A X4005M8-1.8 X4005M8I X4005M8I-2.7 X4005M8I-2.7A X4005M8I-4.5A X4005S8 X4005S8-1.8 X4005S8I-2.7 X4005S8I-4.5A
Description RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
DIODE, STUD 95A 1200vDIODE, STUD 95A 1200v; Voltage, Vrrm:1200v; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200v; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62
Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200v; Current Rating:220A

File Size 256.09K  /  17 Page

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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
Description 41 A, 1200 V, n-channel IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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    HGTP2N120BND

Fairchild Semiconductor
Part No. HGTP2N120BND
Description 12A, 1200v, NPT Series n-channel IGBT with Anti-Parallel Hyperfast Diode

File Size 112.30K  /  8 Page

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For n-channel 1200v - 2 8 - 4 4a - Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

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