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n p-channel Datasheet PDF File

For n p-channel Found Datasheets File :: 52275 Search Time::2.188ms
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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	n-channel HEXFET Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Los...P + Poutput drive Ploss = Irms x Rds(on) This simplified loss equation includes the terms Qgs2...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	n-channel HEXFET Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Los...P + Poutput drive Ploss = Irms x Rds(on) This simplified loss equation includes the terms Qgs2...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	n Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 ...p V ie w DEVICE CHARACTERISTICS IRF7807V RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Absolute Max...
Description	n Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	n Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses S S S G 1 8 7 A D D...p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss...
Description	8.3 A, 30 V, 0.025 ohm, n-CHAnnEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single n-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	n-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOS...p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6.7nC 8.1nC Absolute Ma...
Description	Si, SMALL SIGnAL, FET, MS-012AA n-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	n-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOS...p V ie w DEVICE RATInGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 2...
Description	PROVISIOnAL DATASHEET Chipset for DC-DC Converters 30V Single n-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --- 2.0 3.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www...
Description	TRAnSISTOR \| MOSFET \| n-CHAnnEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| n沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...integral reverse --- --- 32 S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --- 2.0 3.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	n-Channel MOSFET General Description These n-Channel enhancement mode power field effect transistors are produced using Fairchild's propri...p o n s e 10 0 D = 0 .5 0 .2 10 -1 n o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 ....
Description	500V n-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...integral reverse 28 --- --- S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 490 740 ns TJ = 25C, IF = 8.0A --- 3.0 4.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) notes: ...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

For n p-channel Found Datasheets File :: 52275 Search Time::2.188ms
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