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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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Part No. |
BLW32
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OCR Text |
...tter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability ... |
Description |
UHF linear power transistor(UHF线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
81.12K /
12 Page |
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it Online |
Download Datasheet
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
BUL742 7933
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OCR Text |
...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide... |
Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
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File Size |
111.12K /
5 Page |
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it Online |
Download Datasheet
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
BULD118D-1 5247 BULD118
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OCR Text |
...manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the w... |
Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR From old datasheet system
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File Size |
71.39K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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