| |
|
 |
TriQuint Semiconductor,Inc.
|
| Part No. |
TQRLC
|
| OCR Text |
mesfet foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 1 of 7; rev 1.0 1... |
| Description |
Advanced Passives Foundry Service
|
| File Size |
390.24K /
3 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
California Eastern Laboratories
|
| Part No. |
NE650103M-A
|
| OCR Text |
...' s 10 w l & s-band power gaas mesfet features ? low cost plastic package ? usable to 2.7 ghz: pcs, w-cdma, wll, satellite uplink, bwa ? high output power: 40 dbm typ ? high power added efficiency: 45 % typ at 2.3 ghz ? low thermal resista... |
| Description |
10 W L & S-BAND POWER GaAs mesfet
|
| File Size |
183.65K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
M/A-COM Technology Solu...
|
| Part No. |
MASW4060G-15
|
| OCR Text |
... absorptive or reflective gaas mesfet mmic. this part combines small size, low insertion loss and power consumption with high isolation. ideal for many applications and module use. it will function well for designs below... |
| Description |
GaAs SP4T Switch DC - 4.0 GHz
|
| File Size |
504.72K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Amphenol, Corp.
|
| Part No. |
AS179-92LF AS197-306
|
| OCR Text |
...gate drain -5 v n si figure 1a. mesfet control device in high impedance state (?off? state) source 5 k ? gate drain 0 v n si figure 1b. mesfet control device in low impedance state (?on? state)
gaas fets as control devices apn2015 2 sky... |
| Description |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
| File Size |
420.73K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
