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Diodes Inc. Diodes, Inc.
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Part No. |
DL4003-13-F DL4004-13-F DL4001-13-F DL4002-13-F DL4005-13-F DL4007-13-F DL4006-13-F
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OCR Text |
...ctified current @ t t = 75 c i o 1.0 a peak forward surge cur rent 8.3ms single half sine-wave superimposed on rated load i fsm 30 a maximum forward voltage @ i f = 1.0a v f m 1.1 v maximum dc reverse current @ t a = 25 c @rated d... |
Description |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
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File Size |
322.86K /
3 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
DLPT05-7-F
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OCR Text |
... pk 300 w peak forward voltage (i pp = 1a, tp = 8x20 s) v fp 2.1 v diode peak repetitive reverse voltage v rrm 75 v thermal resistance, ju...f = 1mh z from line to be protected to ground pin. 2. tp = 8x20 s. 3. clamping voltage values... |
Description |
SURFACE MOUNT DATALINE PROTECTION DEVICE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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File Size |
104.64K /
4 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
BAS70DW-05-7-F BAS70DW-04-7-F BAS70DW-06-7-F BAS70TW-7-F BAS70BRW-7-F
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OCR Text |
...ard continuous current (note 1) i fm 70 ma non-repetitive peak forward surge current @ t < 1.0s i fsm 100 ma power dissipation (note 1) p d ...f top view characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (b... |
Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.07 A, 70 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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File Size |
63.21K /
3 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
BAS70-05-7-F BAS70-06-7-F BAS70-04-7-F
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OCR Text |
...rd continuous current (note 1) i fm 70 ma non-repetitive peak forward surge current @ t 1.0s i fsm 100 ma power dissipation ...f ? 410 1000 mv t p <300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r... |
Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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File Size |
238.29K /
3 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
BAS40DW-05-7-F BAS40DW-04-7-F BAS40DW-06-7-F BAS40TW-7-F
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OCR Text |
...ard continuous current (note 1) i fm 200 ma non-repetitive peak forward surge current @ t < 1.0s i fsm 600 ma power dissipation (note 1) p d...f characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (br)r 40 ... |
Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 0.2 A, 40 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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File Size |
62.59K /
3 Page |
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Diodes Inc. Diodes, Inc.
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Part No. |
BAS40-05-7-F BAS40-7-F BAS40-06-7-F BAS40-04-7-F
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OCR Text |
...d continuous current (note 1) i fm 200 ma power dissipation (note 1) p d 350 mw forward surge current (note 1) @ t < 1.0s i fsm 60...f ? ? 380 1000 mv t p < 300 s, i f = 1.0ma t p < 300 s, i f = 40ma reverse leakage cu... |
Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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File Size |
209.28K /
3 Page |
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Cypress Semiconductor Corp.
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Part No. |
DIM200PHM33-F
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OCR Text |
...es 3300v v ce(sat) * (typ) 3.0v i c (max) 200a i c(pk) (max) 400a * measured at auxiliary terminals. dim200phm33-f000 half bridge igbt modul...f = 200a i f = 200a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz v ce = 25v, v ge = 0v, f ... |
Description |
IGBT Modules - Half Bridge IGBT模块-半桥
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File Size |
200.78K /
9 Page |
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Price and Availability
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