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  diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 5268    Search Time::2.172ms    
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    BUT11AI

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11AI
OCR Text Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope s...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 5 10 2 4 100 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 17.61K  /  4 Page

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    BUT11APX-1200 BUT11APX-1200_1

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11APX-1200 BUT11APX-1200_1
OCR Text Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching np...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1200 550 1200 6 10 3 5 32 150 150 UNIT V V V...
Description From old datasheet system
Silicon Diffused Power Transistor

File Size 56.72K  /  7 Page

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    BUT11APX

NXP Semiconductors
Philips Semiconductors
Part No. BUT11APX
OCR Text Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 1000 5 10 2 4 32 150 150 UNIT V V V...
Description Silicon Diffused Power Transistor

File Size 76.73K  /  8 Page

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    BUT11AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11AX
OCR Text Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic ful...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 5 10 2 4 32 150 150 UNIT V V A A A ...
Description Silicon Diffused Power Transistor

File Size 118.54K  /  8 Page

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    BUT11F

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11F
OCR Text Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envel...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A...
Description Silicon Diffused Power Transistor

File Size 116.79K  /  8 Page

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    BUT11XI

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11XI
OCR Text Diffused Power Transistor BUT11XI GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic ful...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 5 10 2 4 32 150 150 UNIT V V A A A ...
Description Silicon Diffused Power Transistor
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes

File Size 65.24K  /  7 Page

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    BUX84 BUX85

NXP Semiconductors
Philips Semiconductors
Part No. BUX84 BUX85
OCR Text diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 P...junction to mounting base thermal resistance from junction to ambient in free air VALUE 2.5 70 UNIT ...
Description Silicon diffused power transistors

File Size 94.19K  /  12 Page

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    BUT211X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT211X
OCR Text Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a ...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 32 150 150 UNIT V V A A A A...
Description Silicon Diffused Power Transistor

File Size 53.84K  /  7 Page

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    BUT211 BU2527AF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUT211 BU2527AF
OCR Text Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO2...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 400 5 10 2 4 100 150 150 UNIT V V A A A ...
Description Silicon Diffused Power Transistor 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

File Size 70.77K  /  7 Page

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    BU4550AL

NXP Semiconductors
Philips Semiconductors
Part No. BU4550AL
OCR Text Diffused Power Transistor BU4550AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 25 40 10 15 10 125 150 150 UNIT V V...
Description Silicon Diffused Power Transistor

File Size 16.46K  /  4 Page

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For diffused-junction Found Datasheets File :: 5268    Search Time::2.172ms    
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