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15N120A Z2PK115H A28F010 2SC3703 P2155 4AUP1G LM217HVR UH08A
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    K9K1G08U0M-YCB0 K9K1G08U0M-YIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text ... W E 2. AC parameter tCLR(cle to RE Delay, min 50ns) is added. 3. [Page28] Only address A 14 to A25 is valid while A9 to A13 is ignored --> Only address A14 to A26 is valid while A 9 to A13 is ignored 0.3 (page 30) Sep. 13th 2001 A14 ...
Description 128M x 8 Bit NAND Flash Memory

File Size 465.75K  /  37 Page

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    SAMSUNG
Part No. K9K4G08U0M
OCR Text ...B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C Preliminary FLASH MEMORY X8 N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 573.66K  /  35 Page

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    Toshiba
Part No. TC58NS128DC EA10127
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O4 VSS VSS WE WP I/O1 I/O2 I/O3 I/O1~I/O8 CE I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Ground ...
Description From old datasheet system

File Size 713.71K  /  33 Page

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    TC58NS256DC EA10128

Toshiba Semiconductor
Part No. TC58NS256DC EA10128
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O4 VSS VSS WE WP I/O1 I/O2 I/O3 I/O1~I/O8 CE I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Ground ...
Description TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)

File Size 713.61K  /  33 Page

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    Toshiba.
Part No. TC58NVG0S3AFT00
OCR Text ...RY/BY RE CE NC NC VCC VSS NC NC cle ALE WE WP NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC NC NC I/O8 I/O7 I/O6 I/O5 NC NC NC VCC...
Description
File Size 360.16K  /  32 Page

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    TC58NVG0S3AFT05

Toshiba.
Toshiba Semiconductor
Part No. TC58NVG0S3AFT05
OCR Text ...CE RE CE NC NC VCC VSS NC NC cle ALE WE WP NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Bu...
Description 1 GBIT (128M × 8 BITS) CMOS NAND EEPROM

File Size 549.33K  /  33 Page

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    Toshiba
Part No. TC58NS256BDC
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O1 to I/O8 CE WE RE cle ALE WP WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect R...
Description 256 MBit CMOS NAND EPROM

File Size 412.54K  /  34 Page

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    Toshiba
Part No. TC58NS128BDC
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O1 to I/O8 CE WE RE cle ALE WP WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect R...
Description 128 MBit CMOS NAND EPROM

File Size 412.25K  /  34 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY27SA081G1M-VPEB HY27SA081G1M-VPIP
OCR Text ...device ale address latch enable cle command latch enable ce chip enable re read enable rb read/busy (open-drain output) we write enable wp write protect vcc supply voltage vss ground nc not connected internally du do not use table 1: signal...
Description 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48

File Size 678.08K  /  45 Page

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    Toshiba
Part No. TC58NS100DC
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O1 to I/O8 CE WE RE cle ALE WP WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect R...
Description 1 GBit CMOS NAND EPROM

File Size 533.91K  /  44 Page

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