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  bw1.1 Datasheet PDF File

For bw1.1 Found Datasheets File :: 653    Search Time::1.75ms    
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    IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Part No. IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V65703S85BQI IDT71V65703S85BQ IDT71V65903S85PFI IDT71V65903S80PF IDT71V65903S80BGI IDT71V65903S75PF IDT71V65703S75BG IDT71V65703S75BGI IDT71V65703S75BQ IDT71V65703S75BQI IDT71V65703S75PF IDT71V65703S75PFI IDT71V65703S80BG IDT71V65703S80BGI IDT71V65703S80BQ IDT71V65703S80BQI IDT71V65703S80PF IDT71V65703S80PFI IDT71V65703S85BG IDT71V65703S85BGI IDT71V65703S85PFI IDT71V65903S75BG IDT71V65903S75BGI IDT71V65903S75BQ IDT71V65903S75BQI IDT71V65903S75PFI IDT71V65903S80BG IDT71V65903S80BQ IDT71V65903S80BQI IDT71V65903S80PFI IDT71V65903S85BG IDT71V65903S85BGI IDT71V65903S85BQ IDT71V65903S85BQI IDT71V65903S85PF IDT71V65703S80PFI8 IDT71V65703S75BG8 IDT71V65703S75PF8 IDT71V65703S80BG8 IDT71V65703S80PF8 IDT71V65703S85BG8
OCR Text ... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (5%) 3.3...1 (c)2002 Integrated Device Technology, Inc. IDT71V65703, IDT71V65903, 256K x 36, 512K x 18, 3.3...
Description 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165

File Size 492.00K  /  26 Page

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    IDT
Part No. IDT71V65802 IDT71V65602
OCR Text ... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (5%) 2.5...1 8 CE1, CE 2, CE2 OE R/W CEN BW1, BW2, BW3, BW4 CLK A DV /LD LBO ZZ I/O0-I/O31, I/OP 1-I/O P 4 V D ...
Description 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

File Size 499.29K  /  26 Page

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    IDT
Part No. IDT71V67803
OCR Text ...y A0-A18 CE CS0, CS1 OE GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address Inputs Chip Enable Chip Selects Output Enable Global Write Enable Byte Write Enable Individual Byte Write Selects C...
Description 256K X 36, 512K X 18 3.3V Synchronous SRAMs

File Size 510.91K  /  23 Page

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    GS8672Q20BE-500IT

GSI TECHNOLOGY
Part No. GS8672Q20BE-500IT
OCR Text ... 11 a cq nc (288mb) sa w bw2 k bw1 r sa nf (144mb) cq b q27 q18 d18 sa bw3 k bw0 sa d17 q17 q8 c d27 q28 d19 v ss sa sa sa v ss d16 q7 d8...1 mm bump pitch notes: 1. bw0 controls writes to d0:d8; bw1 controls writes to d9:d17; bw2 cont...
Description 4M X 18 QDR SRAM, 0.45 ns, PBGA165

File Size 472.36K  /  29 Page

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    Cypress Semiconductor Corp.
Part No. CY7C1345 7C1345
OCR Text ... BW0 controls DQ [7:0] and DP0, BW1 controls DQ[15:8] and DP1, BW2 controls DQ[23:16] and DP2, and BW3 controls DQ [31:24] and DP3. See Writ...1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to sele...
Description 128K x 36 Synchronous Flow-Through 3.3V Cache RAM(3.3V 128K x 36 同步流通式高速缓冲RAM) 128K的36同步流动,通过3.3V的高速缓存内存(3.3 128K的36同步流通式高速缓冲内存)
From old datasheet system

File Size 272.33K  /  16 Page

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    GS8672D20BE-500IT GS8672D38BE-500

GSI TECHNOLOGY
Part No. GS8672D20BE-500IT GS8672D38BE-500
OCR Text ... 11 a cq nc (288mb) sa w bw2 k bw1 r sa nf (144mb) cq b q27 q18 d18 sa bw3 k bw0 sa d17 q17 q8 c d27 q28 d19 v ss sa nf sa v ss d16 q7 d8...1 mm bump pitch notes: 1. bw0 controls writes to d0:d8; bw1 controls writes to d9:d17; bw2 cont...
Description 4M X 18 STANDARD SRAM, 0.45 ns, PBGA165
2M X 36 STANDARD SRAM, 0.45 ns, PBGA165

File Size 474.47K  /  30 Page

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    IDT
Part No. IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8
OCR Text ... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 2.5V power supply (5%) 2.5...1 Compliant) Packaged in a JEDEC standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid a...
Description 2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
*NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

File Size 497.65K  /  25 Page

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    K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC20 K7I163682B-FC25
OCR Text ...SS VSS VSS VSS VSS VSS SA C C 7 BW1 BW0 SA VSS VSS VDD VDD VDD VDD VDD VSS VSS SA SA SA 8 LD SA VSS VSS VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ VDDQ V...1. * Checked No Connect(NC) pins are reserved for higher density address, i.e. 10A for 72Mb, 2A for ...
Description 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位,1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG

File Size 375.70K  /  17 Page

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    ICSI[Integrated Circuit Solution Inc]
Part No. IC61SP12836 IC61SP12832 IC61SP12832-166B IC61SP12832-166TQ IC61SP12836-5TQ IC61SP12832-117B IC61SP12832-117TQ IC61SP12832-133B IC61SP12832-133TQ IC61SP12832-150B IC61SP12832-150TQ IC61SP12832-5B IC61SP12832-5TQ IC61SP12836-117B IC61SP12836-117TQ IC61SP12836-133B IC61SP12836-133TQ IC61SP12836-150B IC61SP12836-150TQ IC61SP12836-166B IC61SP12836-166TQ IC61SP12836-5B
OCR Text ...individual bytes to be written. BW1 controls DQa, BW2 controls DQb, BW3 controls DQc, BW4 controls DQd, conditioned by BWE being LOW. A LOW ...1 A VCCQ B NC C NC D DQc1 E DQc2 F VCCQ G DQc5 H DQc7 J VCCQ K DQd1 L DQd4 M VCCQ N DQd6 P DQd8 R NC...
Description 100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM
128K x 32 Pipelined SyncBurst SRAM

File Size 250.19K  /  16 Page

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    IS61SP12832 IS61SP12832-117B IS61SP12832-117TQ IS61SP12832-133TQ IS61SP12832-5TQ IS61SP12832-133B IS61SP12832-150B IS61S

SHARP[Sharp Electrionic Components]
List of Unclassifed Manufacturers
ETC[ETC]
ICSI
Sharp Corporation
Electronic Theatre Controls, Inc.
Integrated Circuit Solution Inc
Part No. IS61SP12832 IS61SP12832-117B IS61SP12832-117TQ IS61SP12832-133TQ IS61SP12832-5TQ IS61SP12832-133B IS61SP12832-150B IS61SP12832-150TQ IS61SP12832-166B IS61SP12832-166TQ IS61SP12832-5B IS450
OCR Text ...individual bytes to be written. BW1 controls DQa, BW2 controls DQb, BW3 controls DQc, BW4 controls DQd, conditioned by BWE being LOW. A LOW ...1 IS61SP12832 BLOCK DIAGRAM MODE Q0 A0' CLK CLK A0 BINARY COUNTER ADV ADSC ADSP CE...
Description SYNCHRONOUS STATIC RAM
OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM
128K x 32 SYNCHRONOUS PIPELINED STATIC RAM 128K的32 SYNCHRONOU拧流水线静态RAM

File Size 487.22K  /  14 Page

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For bw1.1 Found Datasheets File :: 653    Search Time::1.75ms    
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