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				天津新技术产业园区管理委员会
Part No.	IS61DDB41M36-250M3 IS61DDB21M36-250M3 IS61DDB21M36-275M3
OCR Text	burst of 2) cio synchronous srams features ? 1m x 36 or 2m x 18. on-chip delay-locked loop (dll) for wide data valid window. common dat...page 8 for a descripti on of the basi c opera- tions of these ddr-ii (burst of 2) cio sr a ms...
Description
File Size	576.32K / 25 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text	...grams -. CAS latency (2 & 3) -. burst length (1, 2, 4, 8 & Full page) -. burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * burst read single-bit write operation * DQM (x4,x8) & L...
Description	16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	205.22K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text	...grams -. CAS latency (2 & 3) -. burst length (1, 2, 4, 8 & Full page) -. burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * burst read single-bit write operation * DQM (x4,x8) & L...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II
File Size	196.59K / 14 Page	View it Online	Download Datasheet

				天津新技术产业园区管理委员会
Part No.	IS61QDB21M36-250M3 IS61QDB41M36-250M3
OCR Text	burst of 2) synchronous srams features ? 1m x 36 or 2m x 18. on-chip delay-locked loop (dll) for wide data valid window. separate read ...page 8 for a de scription of the basic op era- tions of the se sr a ms. the input address b...
Description
File Size	653.15K / 27 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
Part No.	CY7C1471V33-133ACES CY7C1473V33-133AI CY7C1473V33-133AXC CY7C1471V33-117ACES CY7C1473V33-117AI CY7C1475V33-100BGC CY7C1473V33-100AI CY7C1471V33-133BZXC CY7C1471V33-133BZC CY7C1471V33-133AXC CY7C1475V33-100BGXC CY7C1471V33-100AXC CY7C1473V33-133BZC CY7C1473V33-100BZC
OCR Text	...can for bga and fbga packages ? burst capability?linear or interleaved burst order ? low standby power functional description [1] the cy7c14...page 2 of 29 1 c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b memory array e inpu...
Description	72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 6.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL(TM) Architecture
File Size	375.42K / 29 Page	View it Online	Download Datasheet

				Integrated Silicon Solu...
Part No.	IS42VM16320E
OCR Text	... a1 grade) ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 4 or 8 for interleave burst ? programmable cas latency : 2,3 clocks ? all inputs and outputs refere...
Description	8M x 16Bits x 4Banks Mobile Synchronous DRAM
File Size	537.12K / 33 Page	View it Online	Download Datasheet

				Integrated Silicon Solu...
Part No.	IS42VM16320D
OCR Text	... a1 grade) ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 4 or 8 for interleave burst ? programmable cas latency : 2,3 clocks ? all inputs and outputs referenced...
Description	8M x 16Bits x 4Banks Mobile Synchronous DRAM
File Size	396.53K / 27 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
Part No.	CY7C1312BV18-167BZXC CY7C1310BV18-167BZXC CY7C1314BV18-167BZXC CY7C1910BV18 CY7C1910BV18-167BZXC CY7C1310BV18-200BZC CY7C1310BV18-250BZC CY7C1910BV18-200BZC CY7C1910BV18-250BZC CY7C1314BV18-200BZC CY7C1314BV18-250BZC CY7C1312BV18-167BZC
OCR Text	burst architecture cy7c1310bv18 cy7c1910bv18 cy7c1312bv18 cy7c1314bv18 cypress semiconductor corporation ? 3901 north first street ? san jos...page 2 of 23 l og i c bl oc k di agram (cy7c1310bv18) clk a (19:0) gen. k k control logic addres...
Description	18-Mbit QDR-II SRAM 2-Word burst Architecture 1M X 18 QDR SRAM, 0.5 ns, PBGA165 18-Mbit QDR-II(TM) SRAM 2-Word burst Architecture
File Size	261.59K / 23 Page	View it Online	Download Datasheet

				Integrated Silicon Solu...
Part No.	IS42VM16200D-75BLI IS42VM16200D-6BLI
OCR Text	...cle / 64ms ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 4 or 8 for interleave burst ? programmable cas latency : 2,3 clocks ? all inputs and outputs refere...
Description	1M x 16Bits x 2Banks Low Power Synchronous DRAM
File Size	509.43K / 34 Page	View it Online	Download Datasheet

				Integrated Silicon Solu...
Part No.	IS42VM16160K
OCR Text	...le / 64ms. ? programmable burst length and burst type. - 1, 2, 4, 8 or full page for sequential burst. - 4 or 8 for interleave burst. ? programmable cas latency : 2,3 clocks . ? all inputs and outputs refer...
Description	Auto refresh and self refresh
File Size	557.12K / 34 Page	View it Online	Download Datasheet

For burst page Found Datasheets File :: 9160 Search Time::2.219ms
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