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Mitsubishi Electric Corporation
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| Part No. |
M5M29GB
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| OCR Text |
...flash memories with alternating bgo (back ground operation) feature. the bgo feature of the device allows program or erase operations to be perform ed in one bank while the device simultaneously allows read operations to be performed on the... |
| Description |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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| File Size |
203.00K /
23 Page |
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it Online |
Download Datasheet
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Hamamatsu Photonics K.K.
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| Part No. |
S3204-05 S3204-08 S3204-09 S3584-09 S3204-06 S3584-05 S3584-08 S3584-06
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| OCR Text |
bgo and csi (ti) scintillators l high quantum efficiency qe=85 % ( =540 nm) l low capacitance l high-speed response l high stability l good energy resolution applications l scintillation detectors l calorimeters l hodoscopes l tof counters... |
| Description |
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
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| File Size |
108.32K /
2 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
M5M29GT161BWG M5M29GT161BVP M5M29GB161BVP
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| OCR Text |
...lash memories with alternating bgo (back ground operation) feature. the bgo feature of the device allows program or erase operations to be perform ed in one bank while the device simultaneously allows read operations to be performed on th... |
| Description |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
16777216-bit CMOS 3.3V-only, block erase flash memory
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| File Size |
196.64K /
23 Page |
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it Online |
Download Datasheet |
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Hamamatsu Photonics K.K.
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| Part No. |
S3590-08 S3590-09
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| OCR Text |
bgo and csi (ti) scintillators l high quantum efficiency: qe=85 % ( =540 nm) l low capacitance l high-speed response l high stability l good energy resolution applications l scintillation detectors l calorimeters l hodoscopes l tof counter... |
| Description |
Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
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| File Size |
89.59K /
2 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
M5M29GB161BVP M5M29WT160BVP M5M29GT161BVP M5M29GT160BWG
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| OCR Text |
...flash memories with alternating bgo (back ground operation) feature. the bgo feature of the device allows program or erase operations to be perform ed in one bank while the device simultaneously allows read operations to be performed on the... |
| Description |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 16,777,216位（2097,152 - Word 1048,576字BY16位）的CMOS 3.3只，块擦除闪
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| File Size |
215.48K /
25 Page |
View
it Online |
Download Datasheet |
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Renesas Electronics Corporation.
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| Part No. |
M5M29KE131BTP
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| OCR Text |
...block flash memory. alternating bgo(back ground operation) feature of the device allows program or erase operations to be performed in one bank while the device simultaneously allows read operations to be performed on the other bank in ... |
| Description |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
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| File Size |
315.88K /
33 Page |
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it Online |
Download Datasheet |
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Price and Availability
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