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				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.14K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075 APT8075BN APT8090BN
OCR Text	... EUROPE Avenue J.F. Kennedy bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss C oss Crss Qg Q gs Qgd td (on) tr td (off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge...
Description	POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	49.95K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG INFINEON TECHNOLOGIES AG
Part No.	bat14-014 bat14-034 bat14-044 bat14-064 bat14-074 bat14-094 bat14-104 bat14-114 bat14-124 bat14-4 Q62702-D1019 Q62702-D1036 Q62702-D1066 Q62702-D1005 Q62702-D1026 Q62702-D1041 Q62702-D1051 Q62702-D1056 Q62702-D1061 Q62702-P1139
OCR Text	bat 14- ... 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to 40 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type bat 14-014 bat 14-034 BA...
Description	Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) 硅肖特基二极管（培养基检测器和调音台的应用气密陶瓷封装垒二极管） Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters 砷化镓红外Lumineszenzdioden砷化镓红外辐射器
File Size	46.77K / 3 Page	View it Online	Download Datasheet

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