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90-v Datasheet PDF File

For 90-v Found Datasheets File :: 202577 Search Time::3.531ms
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				Philips
Part No.	BLF0810S-90 BLF0810-90 BLF0810-90_S_N_1
OCR Text	90; BLF0810S-90 Base station LDMOS transistors Preliminary specification 2002 Mar 18 Philips Semiconductors Preliminary specification...V and IDQ = 500 mA PL = 18 W GP = 16 dB = 26 % ACPR <-45 dBc at 750 kHz and BW = 30 kHz ACPR <-63 d...
Description	Base station LDMOS transistors From old datasheet system
File Size	140.94K / 13 Page	View it Online	Download Datasheet

				Rohm CO.,LTD. ROHM[Rohm]
Part No.	RB160M-90
OCR Text	90 Diodes Schottky barrier diode RB160M-90 Applications General rectification External dimensions (Unit : mm) 1.60.1 0.150.03 Land...V V A A Electrical characteristics (Ta=25C) Param eter Forward voltage Revers e current Sym bo...
Description	From old datasheet system Schottky barrier diode
File Size	203.04K / 4 Page	View it Online	Download Datasheet

				Rohm
Part No.	RB085B-90
OCR Text	90 Diodes Schottky barrier diode RB085B-90 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 6...V V A A (*1)Rating of per diode : Io/2 Electrical characteristic (Ta=25C) Parameter Forward...
Description	Schottky barrier diode
File Size	193.85K / 4 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MBM29PL160BD-90 MBM29PL160BD-75 MBM29PL160TD-90 MBM29PL160TD-75 E520872
OCR Text	.../1M x 16) BIT MBM29PL160TD-75/-90/MBM29PL160BD-75/-90 s FEATURES * Single 3.0 V read, program and erase Minimizes system level power requirements * Compatible with JEDEC-standard commands Uses same software commands as E2PROMs * Compatib...
Description	16M (2M x 8/1M x 16) BIT From old datasheet system
File Size	471.58K / 51 Page	View it Online	Download Datasheet

				ON SEMICONDUCTOR
Part No.	CAT28F020N-90
OCR Text	...tures fast read access time: 90/120 ns low power cmos dissipation: ?active: 30 ma max (cmos/ttl levels) ?standby: 1 ma max (ttl levels)...v cc voltage supply v ss ground v pp program/erase voltage supply pin configuration 5115 fhd f01 tso...
Description	256K X 8 FLASH 12V PROM, 90 ns, PQCC32
File Size	111.86K / 15 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	GCU40AA-90
OCR Text	90 HIGH POWER INVERTER USE PRESS PACK TYPE GCU40AA-90 q Asymmetrical GCU unit q GCT and Gate driver are connected q ITQRM Repetitive con...V V V V V Unit A A A kA A 2s A/s V V A A kW kW W W C C kN g (Recommended value 40kN) Typical valu...
Description	Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
File Size	68.41K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	GCU40AB-90
OCR Text	...PR INA ELIM RY GCU40AB-90 HIGH POWER INVERTER USE PRESS PACK TYPE GCU40AB-90 q Asymmetrical GCT unit q GCT and Gate driver are ...V V V V V Unit A A A kA A 2s A/s V V A A kW kW W W C C kN g (Recommended value 40kN) Typical valu...
Description	Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
File Size	69.86K / 5 Page	View it Online	Download Datasheet

				Fujitsu
Part No.	MBM29F002BC-90 MBM29F002BC-70 MBM29F002BC-55 MBM29F002TC-90 MBM29F002TC-70 MBM29F002TC-55 E520868
OCR Text	...K x 8) BIT MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 s FEATURES * * Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-powe...
Description	2M (256K x 8) BIT From old datasheet system
File Size	401.01K / 46 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BLF1820-90 BLF1820-90_2
OCR Text	90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specifi...V and IDQ of 500 mA: - Output power = 90 W (PEP) - Gain = 12 dB - Efficiency = 32% - dim = -26 dBc *...
Description	UHF power LDMOS transistor From old datasheet system
File Size	101.24K / 12 Page	View it Online	Download Datasheet

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